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Title: Spatially indirect radiative recombination in InAlAsSb grown lattice-matched to InP by molecular beam epitaxy

Authors:
 [1];  [2];  [1];  [1];  [1];  [1];  [1];  [1];  [3]
  1. U.S. Naval Research Laboratory, 4555 Overlook Ave. SW., Washington, DC 20375, USA
  2. The George Washington University, 2121 I Street NW, Washington, DC 20037, USA
  3. Sotera Defense Solutions, Inc., Annapolis Junction, Maryland 20701-1067, USA
Publication Date:
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
OSTI Identifier:
1420513
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 117 Journal Issue: 21; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Hirst, Louise C., Lumb, Matthew P., Abell, Josh, Ellis, Chase T., Tischler, Joseph G., Vurgaftman, Igor, Meyer, Jerry R., Walters, Robert J., and González, María. Spatially indirect radiative recombination in InAlAsSb grown lattice-matched to InP by molecular beam epitaxy. United States: N. p., 2015. Web. doi:10.1063/1.4921883.
Hirst, Louise C., Lumb, Matthew P., Abell, Josh, Ellis, Chase T., Tischler, Joseph G., Vurgaftman, Igor, Meyer, Jerry R., Walters, Robert J., & González, María. Spatially indirect radiative recombination in InAlAsSb grown lattice-matched to InP by molecular beam epitaxy. United States. doi:10.1063/1.4921883.
Hirst, Louise C., Lumb, Matthew P., Abell, Josh, Ellis, Chase T., Tischler, Joseph G., Vurgaftman, Igor, Meyer, Jerry R., Walters, Robert J., and González, María. Sun . "Spatially indirect radiative recombination in InAlAsSb grown lattice-matched to InP by molecular beam epitaxy". United States. doi:10.1063/1.4921883.
@article{osti_1420513,
title = {Spatially indirect radiative recombination in InAlAsSb grown lattice-matched to InP by molecular beam epitaxy},
author = {Hirst, Louise C. and Lumb, Matthew P. and Abell, Josh and Ellis, Chase T. and Tischler, Joseph G. and Vurgaftman, Igor and Meyer, Jerry R. and Walters, Robert J. and González, María},
abstractNote = {},
doi = {10.1063/1.4921883},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 21,
volume = 117,
place = {United States},
year = {2015},
month = {6}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1063/1.4921883

Citation Metrics:
Cited by: 15 works
Citation information provided by
Web of Science

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Works referenced in this record:

Band parameters for III–V compound semiconductors and their alloys
journal, June 2001

  • Vurgaftman, I.; Meyer, J. R.; Ram-Mohan, L. R.
  • Journal of Applied Physics, Vol. 89, Issue 11, p. 5815-5875
  • DOI: 10.1063/1.1368156