skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Long term reliability study and life time model of quantum cascade lasers

Authors:
 [1];  [1];  [1];  [1];  [2];  [2];  [2]; ORCiD logo [1]
  1. Thorlabs Quantum Electronics, 10335 Guilford Rd, Jessup, Maryland 20794, USA
  2. Center for Nanoscale Materials, Argonne National Laboratory, 9700 S. Cass Avenue, Lemont, Illinois 60439, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1420468
Grant/Contract Number:
AC02-06CH11357
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 109; Journal Issue: 12; Related Information: CHORUS Timestamp: 2018-02-14 09:46:34; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Xie, Feng, Nguyen, Hong-Ky, Leblanc, Herve, Hughes, Larry, Wang, Jie, Wen, Jianguo, Miller, Dean J., and Lascola, Kevin. Long term reliability study and life time model of quantum cascade lasers. United States: N. p., 2016. Web. doi:10.1063/1.4962808.
Xie, Feng, Nguyen, Hong-Ky, Leblanc, Herve, Hughes, Larry, Wang, Jie, Wen, Jianguo, Miller, Dean J., & Lascola, Kevin. Long term reliability study and life time model of quantum cascade lasers. United States. doi:10.1063/1.4962808.
Xie, Feng, Nguyen, Hong-Ky, Leblanc, Herve, Hughes, Larry, Wang, Jie, Wen, Jianguo, Miller, Dean J., and Lascola, Kevin. 2016. "Long term reliability study and life time model of quantum cascade lasers". United States. doi:10.1063/1.4962808.
@article{osti_1420468,
title = {Long term reliability study and life time model of quantum cascade lasers},
author = {Xie, Feng and Nguyen, Hong-Ky and Leblanc, Herve and Hughes, Larry and Wang, Jie and Wen, Jianguo and Miller, Dean J. and Lascola, Kevin},
abstractNote = {},
doi = {10.1063/1.4962808},
journal = {Applied Physics Letters},
number = 12,
volume = 109,
place = {United States},
year = 2016,
month = 9
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1063/1.4962808

Save / Share:
  • We report the long-term reliability measurement on uncoated Al-free InGaAsP/GaAs ({lambda}=808nm) lasers at high-power and high-temperature operation. No degradation in laser performance has been observed for over 30000 h of lifetime testing in any of randomly selected several 100-{mu}m-wide uncoated lasers operated at 60{degree}C with 1 W continuous wave output power. This is the first and the most conclusive evidence ever reported that directly shows the high long-term reliability of uncoated Al-free lasers. {copyright} {ital 1997 American Institute of Physics.}
  • We present five-stage bipolar-cascade vertical-cavity surface-emitting lasers emitting at 1.54 {mu}m grown monolithically on an InP substrate by molecular beam epitaxy. A differential quantum efficiency of 120%, was measured with a threshold current density of 767 A/cm{sup 2} and voltage of 4.49 V, only 0.5 V larger than 5x0.8 V, the aggregate photon energy. Diffraction loss study on deeply etched pillars indicates that diffraction loss is a major loss mechanism for such multiple-active region devices larger than 20 {mu}m. We also report a model on the relationship of diffraction loss to the number of active stages.
  • The authors report on the development of high-reflection and multilayer antireflection coatings using ion-beam sputtering deposition for long-wave infrared ({lambda}{approx}9.4 {mu}m) quantum cascade lasers. A metallic high-reflection coating structure using Y{sub 2}O{sub 3} and Au is demonstrated to achieve a high reflectance of 96.70%, and the use of a multilayer anti-reflection coating structure using PbTe and ZnO is demonstrated to achieve a very low reflectance of 1.64%. A 170% improvement of peak laser output power and a 169% increase in wall-plug efficiency are reported without any beam steering effects.
  • We demonstrate quantum cascade lasers in the InAs/AlSb material system emitting at wavelengths of λ = 19 μm and λ = 21 μm. The maximum operating temperatures are 291 K and 250 K, and the threshold current densities at 78 K are as low as 0.6 kA/cm{sup 2} and 1.3 kA/cm{sup 2} for the lasers emitting at λ = 19 μm and λ = 21 μm, respectively. These values represent the best performance to date for quantum cascade lasers operating above λ = 16 μm. Although the devices employ metal-metal waveguide geometries, the diffraction effects which typically hinder the output beam of THz devices are not observed.
  • We demonstrate quantum cascade lasers in the InAs/AlSb material system which operate up to 333 K (in pulsed regime) at λ = 17.8 μm. They employ metal-metal optical waveguides and the threshold current density is 1.6 kA/cm{sup 2} at 78 K. We also report distributed-feedback devices obtained using the same laser material via a 1{sup st}-order Bragg grating inscribed in the sole top metallic contact. Spectral single mode operation with more than 20 dB side mode suppression ratio is achieved at a temperature of 300 K. Large wavelength tuning rates, of the order of 1.5 nm/K, are demonstrated. A wavelength coverage of 0.38 μm is achieved in single-mode regime overmore » a temperature range of 255 K.« less