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Title: I 2 basal stacking fault as a degradation mechanism in reverse gate-biased AlGaN/GaN HEMTs

Authors:
 [1];  [1];  [2];  [2];  [3];  [1]
  1. Department of Materials Science and Engineering, Drexel University, 3141 Chestnut Street, Philadelphia, Pennsylvania 19104, USA
  2. Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, USA
  3. Naval Research Laboratory, 4555 Overlook Ave. SW, Washington, DC 20375, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1420467
Grant/Contract Number:  
DEAC02-06CH11357
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 109 Journal Issue: 13; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Lang, A. C., Hart, J. L., Wen, J. G., Miller, D. J., Meyer, D. J., and Taheri, M. L. I 2 basal stacking fault as a degradation mechanism in reverse gate-biased AlGaN/GaN HEMTs. United States: N. p., 2016. Web. doi:10.1063/1.4963156.
Lang, A. C., Hart, J. L., Wen, J. G., Miller, D. J., Meyer, D. J., & Taheri, M. L. I 2 basal stacking fault as a degradation mechanism in reverse gate-biased AlGaN/GaN HEMTs. United States. doi:10.1063/1.4963156.
Lang, A. C., Hart, J. L., Wen, J. G., Miller, D. J., Meyer, D. J., and Taheri, M. L. Mon . "I 2 basal stacking fault as a degradation mechanism in reverse gate-biased AlGaN/GaN HEMTs". United States. doi:10.1063/1.4963156.
@article{osti_1420467,
title = {I 2 basal stacking fault as a degradation mechanism in reverse gate-biased AlGaN/GaN HEMTs},
author = {Lang, A. C. and Hart, J. L. and Wen, J. G. and Miller, D. J. and Meyer, D. J. and Taheri, M. L.},
abstractNote = {},
doi = {10.1063/1.4963156},
journal = {Applied Physics Letters},
number = 13,
volume = 109,
place = {United States},
year = {Mon Sep 26 00:00:00 EDT 2016},
month = {Mon Sep 26 00:00:00 EDT 2016}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1063/1.4963156

Citation Metrics:
Cited by: 1 work
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Works referenced in this record:

AlGaN/GaN HEMTs-an overview of device operation and applications
journal, June 2002