Improvement of stability of Nb3 Sn superconductors by introducing high specific heat substances
- Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)
- Hyper Tech Research Inc, Columbus, OH (United States)
High-Jc Nb3Sn conductors have low stability against perturbations, which accounts for the slow training rates of high-field Nb3Sn magnets. While it is known that adding substances with high specific heat (C) into Nb3Sn wires can increase their overall specific heat and thus improve their stability, there has not been a practical method that is compatible with the fabrication of long-length conductors. In this work, we put forward a scheme to introduce such substances to distributed-barrier Nb3Sn wires, which adds minimum difficulty to the wire manufacturing process. Multifilamentary wires using a mixture of Cu and high-C Gd2O3 powders have been successfully fabricated along this line. Measurements showed that addition of Gd2O3 had no negative effects on residual resitivity ratio or non-Cu Jc, and that flux jumps were remarkably reduced, and minimum quench energy values at 4.2 K, 14 T were increased by a factor of three, indicating that stability was significantly improved. We also discussed the influences of the positioning of high-C substances and their thermal diffusivity on their effectiveness in reducing the superconductor temperature rise against perturbations. Based on these results, we proposed an optimized conductor architecture to maximize the effectiveness of this approach.
- Research Organization:
- Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), High Energy Physics (HEP)
- Grant/Contract Number:
- AC02-07CH11359
- OSTI ID:
- 1420417
- Report Number(s):
- FERMILAB-PUB-17-573-TD; 1650513; TRN: US1801491
- Journal Information:
- Superconductor Science and Technology, Vol. 31, Issue 3; ISSN 0953-2048
- Publisher:
- IOP PublishingCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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