Integrated modeling of high βN steady state scenario on DIII-D
- Oak Ridge National Lab., Oak Ridge, TN (United States)
- General Atomics, San Diego, CA (United States)
- Lawrence Livermore National Lab., Livermore, CA (United States)
- Seoul National Univ., Seoul (South Korea)
Theory-based integrated modeling validated against DIII-D experiments predicts that fully non-inductive DIII-D operation with βN > 4.5 is possible with certain upgrades. IPS-FASTRAN is a new iterative numerical procedure that integrates models of core transport, edge pedestal, equilibrium, stability, heating, and current drive self-consistently to find steady-state (d/dt = 0) solutions and reproduces most features of DIII-D high βN discharges with a stationary current profile. Projecting forward to scenarios possible on DIII-D with future upgrades, the high qmin > 2 scenario achieves stable operation at βN as high as 5 by using a very broad current density profile to improve the ideal-wall stabilization of low-n instabilities along with confinement enhancement from low magnetic shear. This modeling guides the necessary upgrades of the heating and current drive system to realize reactor-relevant high βN steady-state scenarios on DIII-D by simultaneous optimization of the current and pressure profiles.
- Research Organization:
- General Atomics, San Diego, CA (United States); Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States); Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Fusion Energy Sciences (FES); USDOE National Nuclear Security Administration (NNSA)
- Grant/Contract Number:
- FC02-04ER54698; AC02-05CH11231; AC05-00OR22725; FG02-95ER54309; FG02-95ER54698
- OSTI ID:
- 1420378
- Alternate ID(s):
- OSTI ID: 1416464; OSTI ID: 1502048; OSTI ID: 1649653
- Report Number(s):
- LLNL-JRNL-752091; TRN: US1801486
- Journal Information:
- Physics of Plasmas, Vol. 25, Issue 1; ISSN 1070-664X
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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