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Title: Compositional effects in Ag2ZnSnSe4 thin films and photovoltaic devices

Journal Article · · Acta Materialia
ORCiD logo [1];  [2];  [1];  [1];  [1];  [1];  [3];  [1]
  1. IBM, Yorktown Heights, NY (United States). Thomas J. Watson Research Center
  2. Univ. of California, San Diego, CA (United States). Materials Science and Engineering Program. Dept. of Chemistry and Biochemistry
  3. Univ. of California, San Diego, CA (United States). Dept. of Chemistry and Biochemistry

Ag2ZnSnSe4 (AZTSe) is a relatively new n-type photovoltaic (PV) absorber material which has recently demonstrated a conversion efficiency of ~5% in a Schottky device architecture. To date, little is known about how the influence of composition on AZTSe material properties and the resulting PV performance. In this study, the Ag/Sn ratio is shown to be critical in the controlling grain growth, non-radiative recombination, and the bulk defect structure of the absorber. Insufficient Ag (relative to Zn and Sn) results in small grains, low photoluminescence intensities, and band gap narrowing, possibly due to an increase in the bulk defect density. Additionally, etching the AZTSe films in KCN prior to junction formation is found to be important for achieving reproducible efficiencies. Surface analysis using Auger Nanoprobe Microscopy analysis reveals that a KCN etch can selectively remove potentially harmful Ag-rich secondary phases, therefore improving the MoO3/AZTSe junction quality. Moreover, grain boundaries in AZTSe are found to be enriched in Sn and O following KCN; the role this oxide plays in surface passivation and junction formation has yet to be determined.

Research Organization:
IBM, Yorktown Heights, NY (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
Grant/Contract Number:
EE0006334
OSTI ID:
1533464
Alternate ID(s):
OSTI ID: 1420001
Journal Information:
Acta Materialia, Vol. 126; ISSN 1359-6454
Publisher:
ElsevierCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 23 works
Citation information provided by
Web of Science

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Cited By (3)

Progress and Perspectives of Thin Film Kesterite Photovoltaic Technology: A Critical Review journal February 2019
Cation Substitution in Earth-Abundant Kesterite Photovoltaic Materials journal January 2018
Structural, electrical, and optical properties of Ag 2 ZnSnSe 4 for photodetection application journal January 2019

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