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Title: Dynamics of recombination via conical intersection in a semiconductor nanocrystal

Journal Article · · Chemical Science
DOI:https://doi.org/10.1039/c7sc04221c· OSTI ID:1419973
 [1]; ORCiD logo [2]; ORCiD logo [3]; ORCiD logo [1]
  1. Michigan State Univ., East Lansing, MI (United States). Dept. of Chemistry
  2. Stanford Univ., CA (United States). Dept. of Chemistry; SLAC National Accelerator Lab., Menlo Park, CA (United States). Photon Ultrafast Laser Science and Engineering Inst. (PULSE)
  3. Univ. of Minnesota, Minneapolis, MN (United States). Dept. of Chemistry

The ultrafast dynamics of nonradiative recombination at dangling bond defects is elucidated by nanoscale multireferenceab initiomolecular dynamics simulations.

Research Organization:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Organization:
USDOE; National Science Foundation (NSF)
Grant/Contract Number:
CHE-1565634; AC02-76SF00515
OSTI ID:
1419973
Alternate ID(s):
OSTI ID: 1475548
Journal Information:
Chemical Science, Vol. 9, Issue 3; ISSN 2041-6520
Publisher:
Royal Society of ChemistryCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 17 works
Citation information provided by
Web of Science

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Cited By (3)

Influence of solvent electron affinity on paramagnetic defects in hybrid Si/SiOx luminescent nanoparticles journal June 2019
Locality of conical intersections in semiconductor nanomaterials journal January 2019
Modeling nonadiabatic dynamics in condensed matter materials: some recent advances and applications journal November 2019

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