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Title: Influence of MgO Barrier Quality on Spin-Transfer Torque in Magnetic Tunnel Junctions

Abstract

Here, we studied the bias dependence of spin transfer torque in the MgO-based magnetic tunnel junction using a field-modulated spin torque ferromagnetic resonance measurement technique for three devices with tunneling magnetoresistances (MRs) of 60%, 67%, and 73%, respectively. The devices with a lower MR ratio showed the presence of multiple modes, while the device with higher MR (73%) showed a single resonance mode. We found a lower out-of-plane torkance in our devices compared to the in-plane torkance. The out-of-plane torque is linear with applied bias, while the bias dependence of in-plane torque shows a strong dependence on the MR ratio and hence the barrier quality.

Authors:
 [1];  [1];  [2];  [3];  [1]
  1. Indian Inst. of Technology (IIT), Delhi (India). Dept. of Physics
  2. Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
  3. Univ. of Gothenburg (Sweden). Dept. of Physics; KTH Royal Inst. of Technology, Stockholm (Sweden). Materials and NanoPhysics, School of Engineering Sciences
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); India Department of Science and Technology; Swedish Foundation for Strategic Research (SSF)
OSTI Identifier:
1419948
Alternate Identifier(s):
OSTI ID: 1416222
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 112; Journal Issue: 2; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Spintronics; Magnetic tunnel junctions; Ferromagnetic resonance; Magnetic ordering; Electrical properties

Citation Formats

Tiwari, Dhananjay, Sharma, Raghav, Heinonen, O. G., Akerman, J., and Muduli, P. K. Influence of MgO Barrier Quality on Spin-Transfer Torque in Magnetic Tunnel Junctions. United States: N. p., 2018. Web. doi:10.1063/1.5005893.
Tiwari, Dhananjay, Sharma, Raghav, Heinonen, O. G., Akerman, J., & Muduli, P. K. Influence of MgO Barrier Quality on Spin-Transfer Torque in Magnetic Tunnel Junctions. United States. doi:10.1063/1.5005893.
Tiwari, Dhananjay, Sharma, Raghav, Heinonen, O. G., Akerman, J., and Muduli, P. K. Mon . "Influence of MgO Barrier Quality on Spin-Transfer Torque in Magnetic Tunnel Junctions". United States. doi:10.1063/1.5005893. https://www.osti.gov/servlets/purl/1419948.
@article{osti_1419948,
title = {Influence of MgO Barrier Quality on Spin-Transfer Torque in Magnetic Tunnel Junctions},
author = {Tiwari, Dhananjay and Sharma, Raghav and Heinonen, O. G. and Akerman, J. and Muduli, P. K.},
abstractNote = {Here, we studied the bias dependence of spin transfer torque in the MgO-based magnetic tunnel junction using a field-modulated spin torque ferromagnetic resonance measurement technique for three devices with tunneling magnetoresistances (MRs) of 60%, 67%, and 73%, respectively. The devices with a lower MR ratio showed the presence of multiple modes, while the device with higher MR (73%) showed a single resonance mode. We found a lower out-of-plane torkance in our devices compared to the in-plane torkance. The out-of-plane torque is linear with applied bias, while the bias dependence of in-plane torque shows a strong dependence on the MR ratio and hence the barrier quality.},
doi = {10.1063/1.5005893},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 2,
volume = 112,
place = {United States},
year = {2018},
month = {1}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 1 work
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Figures / Tables:

Figure 1 Figure 1: (a) The MTJ resistance as a function of applied magnetic fi eld for varying MR ratios of 60%, 67% and 73%. The measurement was performed at in-plane field angle of θ = 180°. (b) ΔRdc variation with applied dc bias voltage.

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    Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.