Influence of MgO Barrier Quality on Spin-Transfer Torque in Magnetic Tunnel Junctions
- Indian Inst. of Technology (IIT), Delhi (India). Dept. of Physics
- Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
- Univ. of Gothenburg (Sweden). Dept. of Physics; KTH Royal Inst. of Technology, Stockholm (Sweden). Materials and NanoPhysics, School of Engineering Sciences
Here, we studied the bias dependence of spin transfer torque in the MgO-based magnetic tunnel junction using a field-modulated spin torque ferromagnetic resonance measurement technique for three devices with tunneling magnetoresistances (MRs) of 60%, 67%, and 73%, respectively. The devices with a lower MR ratio showed the presence of multiple modes, while the device with higher MR (73%) showed a single resonance mode. We found a lower out-of-plane torkance in our devices compared to the in-plane torkance. The out-of-plane torque is linear with applied bias, while the bias dependence of in-plane torque shows a strong dependence on the MR ratio and hence the barrier quality.
- Research Organization:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); India Department of Science and Technology; Swedish Foundation for Strategic Research (SSF)
- Grant/Contract Number:
- AC02-06CH11357
- OSTI ID:
- 1419948
- Alternate ID(s):
- OSTI ID: 1416222
- Journal Information:
- Applied Physics Letters, Vol. 112, Issue 2; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 7 works
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