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Title: Superconductor-insulator transition in fcc GeS b 2 T e 4 at elevated pressures

Authors:
; ; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
Sponsoring Org.:
FOREIGN
OSTI Identifier:
1419862
Resource Type:
Journal Article
Resource Relation:
Journal Name: Physical Review B; Journal Volume: 97; Journal Issue: 2
Country of Publication:
United States
Language:
ENGLISH

Citation Formats

Hen, Bar, Layek, Samar, Goldstein, Moshe, Shelukhin, Victor, Shulman, Mark, Karpovski, Michael, Greenberg, Eran, Sterer, Eran, Dagan, Yoram, Rozenberg, Gregory Kh., and Palevski, Alexander. Superconductor-insulator transition in fcc GeSb2Te4 at elevated pressures. United States: N. p., 2018. Web. doi:10.1103/PhysRevB.97.024513.
Hen, Bar, Layek, Samar, Goldstein, Moshe, Shelukhin, Victor, Shulman, Mark, Karpovski, Michael, Greenberg, Eran, Sterer, Eran, Dagan, Yoram, Rozenberg, Gregory Kh., & Palevski, Alexander. Superconductor-insulator transition in fcc GeSb2Te4 at elevated pressures. United States. doi:10.1103/PhysRevB.97.024513.
Hen, Bar, Layek, Samar, Goldstein, Moshe, Shelukhin, Victor, Shulman, Mark, Karpovski, Michael, Greenberg, Eran, Sterer, Eran, Dagan, Yoram, Rozenberg, Gregory Kh., and Palevski, Alexander. 2018. "Superconductor-insulator transition in fcc GeSb2Te4 at elevated pressures". United States. doi:10.1103/PhysRevB.97.024513.
@article{osti_1419862,
title = {Superconductor-insulator transition in fcc GeSb2Te4 at elevated pressures},
author = {Hen, Bar and Layek, Samar and Goldstein, Moshe and Shelukhin, Victor and Shulman, Mark and Karpovski, Michael and Greenberg, Eran and Sterer, Eran and Dagan, Yoram and Rozenberg, Gregory Kh. and Palevski, Alexander},
abstractNote = {},
doi = {10.1103/PhysRevB.97.024513},
journal = {Physical Review B},
number = 2,
volume = 97,
place = {United States},
year = 2018,
month = 1
}