skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Properties of the electrostatically driven helical plasma state

Authors:
 [1];  [1];  [1];  [1];  [1]
  1. Tibbar Plasma Technologies, 274 DP Rd., Los Alamos, New Mexico 87544, USA
Publication Date:
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
OSTI Identifier:
1419704
Grant/Contract Number:
AR0000677
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Physics of Plasmas
Additional Journal Information:
Journal Volume: 25; Journal Issue: 2; Related Information: CHORUS Timestamp: 2018-02-06 14:27:06; Journal ID: ISSN 1070-664X
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Akçay, Cihan, Finn, John M., Nebel, Richard A., Barnes, Daniel C., and Martin, Neal. Properties of the electrostatically driven helical plasma state. United States: N. p., 2018. Web. doi:10.1063/1.5006902.
Akçay, Cihan, Finn, John M., Nebel, Richard A., Barnes, Daniel C., & Martin, Neal. Properties of the electrostatically driven helical plasma state. United States. doi:10.1063/1.5006902.
Akçay, Cihan, Finn, John M., Nebel, Richard A., Barnes, Daniel C., and Martin, Neal. 2018. "Properties of the electrostatically driven helical plasma state". United States. doi:10.1063/1.5006902.
@article{osti_1419704,
title = {Properties of the electrostatically driven helical plasma state},
author = {Akçay, Cihan and Finn, John M. and Nebel, Richard A. and Barnes, Daniel C. and Martin, Neal},
abstractNote = {},
doi = {10.1063/1.5006902},
journal = {Physics of Plasmas},
number = 2,
volume = 25,
place = {United States},
year = 2018,
month = 2
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on February 6, 2019
Publisher's Accepted Manuscript

Save / Share:
  • Cited by 1
  • Etching of polysilicon features using a helical resonator plasma source is evaluated. Performance metrics consist of etching rate, etching rate uniformity, and profile control using HBr/O{sub 2}{endash}He gas-phase chemistry. The effect of source power, rf-bias power, and reactor pressure on etching rate and uniformity is examined using a response surface experiment. Feature profile control is determined by examining nested and isolated lines and trenches using oxide mask/polysilicon/oxide structures. Good uniformity and vertical profiles are obtained at low reactor pressures, high source power, and rf-bias between 50 and 60 W. The operating point for best uniformity is at 3.5 mTorr, 3000more » W source power, and 53 W rf-bias power. At this point, the etching rate is 3700 A/min and the nonuniformity is less than 1.0{percent}, over 125-mm-diam wafers. Radial profiles of electron temperature and ion density near the wafer surface are presented as a function of source power, rf-bias power, and reactor pressure. The ion density was found to be in the mid-10{sup 11} cm{sup {minus}3} range and electron temperatures were 5{endash}7 eV. An increase in source power and reactor pressure results in an increase in ion density; however, the electron temperature shows a weaker dependence. Finally, these results are compared to those using helicon and multipole electron cyclotron resonance plasma sources evaluated in previous studies. We found that all three plasma sources provide high ion density at low pressures to meet performance demands for polysilicon etching; however, the helical resonator source offers somewhat higher etching rate and better bulk plasma uniformity. {copyright} {ital 1996 American Vacuum Society}« less
  • A continuum model for the phase separation and coarsening in electrostatically driven granular media is formulated in terms of a Ginzburg-Landau equation subject to conservation of the total number of grains. In the regime of well-developed clusters, the continuum model is used to derive 'sharp-interface' equations that govern the dynamics of the interphase boundary. The model captures the essential physics of this system.