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Title: High growth rate hydride vapor phase epitaxy at low temperature through use of uncracked hydrides

Abstract

We demonstrate hydride vapor phase epitaxy (HVPE) of GaAs with unusually high growth rates (RG) at low temperature and atmospheric pressure by employing a hydride-enhanced growth mechanism. Under traditional HVPE growth conditions that involve growth from Asx species, RG exhibits a strong temperature dependence due to slow kinetics at the surface, and growth temperatures >750 degrees C are required to obtain RG > 60 um/h. We demonstrate that when the group V element reaches the surface in a hydride, the kinetic barrier is dramatically reduced and surface kinetics no longer limit RG. In this regime, RG is dependent on mass transport of uncracked AsH3 to the surface. By controlling the AsH3 velocity and temperature profile of the reactor, which both affect the degree of AsH3 decomposition, we demonstrate tuning of RG. We achieve RG above 60 um/h at temperatures as low as 560 degrees C and up to 110 um/h at 650 degrees C. We incorporate high-RG GaAs into solar cell devices to verify that the electronic quality does not deteriorate as RG is increased. The open circuit voltage (VOC), which is a strong function of non-radiative recombination in the bulk material, exhibits negligible variance in a series of devicesmore » grown at 650 degrees C with RG = 55-110 um/h. The implications of low temperature growth for the formation of complex heterostructure devices by HVPE are discussed.« less

Authors:
 [1]; ORCiD logo [2];  [1];  [1]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  2. Rose-Hulman Inst. of Technology, Terre Haute, IN (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
OSTI Identifier:
1419415
Alternate Identifier(s):
OSTI ID: 1417702
Report Number(s):
NREL/JA-5J00-70522
Journal ID: ISSN 0003-6951; TRN: US1801346
Grant/Contract Number:  
AC36-08GO28308
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 112; Journal Issue: 4; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; chemical compounds; epitaxy; semiconductors; heterojunctions; electrical properties

Citation Formats

Schulte, Kevin L., Braun, Anna, Simon, John, and Ptak, Aaron J.. High growth rate hydride vapor phase epitaxy at low temperature through use of uncracked hydrides. United States: N. p., 2018. Web. doi:10.1063/1.5013136.
Schulte, Kevin L., Braun, Anna, Simon, John, & Ptak, Aaron J.. High growth rate hydride vapor phase epitaxy at low temperature through use of uncracked hydrides. United States. doi:10.1063/1.5013136.
Schulte, Kevin L., Braun, Anna, Simon, John, and Ptak, Aaron J.. Mon . "High growth rate hydride vapor phase epitaxy at low temperature through use of uncracked hydrides". United States. doi:10.1063/1.5013136.
@article{osti_1419415,
title = {High growth rate hydride vapor phase epitaxy at low temperature through use of uncracked hydrides},
author = {Schulte, Kevin L. and Braun, Anna and Simon, John and Ptak, Aaron J.},
abstractNote = {We demonstrate hydride vapor phase epitaxy (HVPE) of GaAs with unusually high growth rates (RG) at low temperature and atmospheric pressure by employing a hydride-enhanced growth mechanism. Under traditional HVPE growth conditions that involve growth from Asx species, RG exhibits a strong temperature dependence due to slow kinetics at the surface, and growth temperatures >750 degrees C are required to obtain RG > 60 um/h. We demonstrate that when the group V element reaches the surface in a hydride, the kinetic barrier is dramatically reduced and surface kinetics no longer limit RG. In this regime, RG is dependent on mass transport of uncracked AsH3 to the surface. By controlling the AsH3 velocity and temperature profile of the reactor, which both affect the degree of AsH3 decomposition, we demonstrate tuning of RG. We achieve RG above 60 um/h at temperatures as low as 560 degrees C and up to 110 um/h at 650 degrees C. We incorporate high-RG GaAs into solar cell devices to verify that the electronic quality does not deteriorate as RG is increased. The open circuit voltage (VOC), which is a strong function of non-radiative recombination in the bulk material, exhibits negligible variance in a series of devices grown at 650 degrees C with RG = 55-110 um/h. The implications of low temperature growth for the formation of complex heterostructure devices by HVPE are discussed.},
doi = {10.1063/1.5013136},
journal = {Applied Physics Letters},
number = 4,
volume = 112,
place = {United States},
year = {Mon Jan 22 00:00:00 EST 2018},
month = {Mon Jan 22 00:00:00 EST 2018}
}

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Works referenced in this record:

Controlled formation of GaAs pn junctions during hydride vapor phase epitaxy of GaAs
journal, August 2012