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Title: Excitation-dependent carrier lifetime and diffusion length in bulk CdTe determined by time-resolved optical pump-probe techniques

Abstract

We applied time-resolved pump-probe spectroscopy based on free carrier absorption and light diffraction on a transient grating for direct measurements of the carrier lifetime and diffusion coefficient D in high-resistivity single crystal CdTe (codoped with In and Er). The bulk carrier lifetime t decreased from 670 +/-50 ns to 60 +/- 10 ns with increase of excess carrier density N from 10 16 to 5 x 10 18cm -3 due to the excitation-dependent radiative recombination rate. In this N range, the carrier diffusion length dropped from 14 um to 6 um due to lifetime decrease. Modeling of in-depth (axial) and in-plane (lateral) carrier diffusion provided the value of surface recombination velocity S = 6 x 10 5 cm/s for the untreated surface. At even higher excitations, in the 10 19-3 x 10 20 cm -3 density range, D increase from 5 to 20 cm^2/s due to carrier degeneracy was observed.

Authors:
ORCiD logo [1]; ORCiD logo [1];  [1]; ORCiD logo [2]; ORCiD logo [3];  [3];  [1]
  1. Vilnius Univ. (Lithuania)
  2. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  3. Washington State Univ., Pullman, WA (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
OSTI Identifier:
1419412
Alternate Identifier(s):
OSTI ID: 1416650
Report Number(s):
NREL/JA-5900-70419
Journal ID: ISSN 0021-8979; TRN: US1801345
Grant/Contract Number:  
AC36-08GO28308; AC36-08-GO28308
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 123; Journal Issue: 2; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; semiconductors; pump probe experiments; optical properties; electrical properties; light defraction

Citation Formats

Ščajev, Patrik, Miasojedovas, Saulius, Mekys, Algirdas, Kuciauskas, Darius, Lynn, Kelvin G., Swain, Santosh K., and Jarašiūnas, Kęstutis. Excitation-dependent carrier lifetime and diffusion length in bulk CdTe determined by time-resolved optical pump-probe techniques. United States: N. p., 2018. Web. doi:10.1063/1.5010780.
Ščajev, Patrik, Miasojedovas, Saulius, Mekys, Algirdas, Kuciauskas, Darius, Lynn, Kelvin G., Swain, Santosh K., & Jarašiūnas, Kęstutis. Excitation-dependent carrier lifetime and diffusion length in bulk CdTe determined by time-resolved optical pump-probe techniques. United States. doi:10.1063/1.5010780.
Ščajev, Patrik, Miasojedovas, Saulius, Mekys, Algirdas, Kuciauskas, Darius, Lynn, Kelvin G., Swain, Santosh K., and Jarašiūnas, Kęstutis. Sun . "Excitation-dependent carrier lifetime and diffusion length in bulk CdTe determined by time-resolved optical pump-probe techniques". United States. doi:10.1063/1.5010780.
@article{osti_1419412,
title = {Excitation-dependent carrier lifetime and diffusion length in bulk CdTe determined by time-resolved optical pump-probe techniques},
author = {Ščajev, Patrik and Miasojedovas, Saulius and Mekys, Algirdas and Kuciauskas, Darius and Lynn, Kelvin G. and Swain, Santosh K. and Jarašiūnas, Kęstutis},
abstractNote = {We applied time-resolved pump-probe spectroscopy based on free carrier absorption and light diffraction on a transient grating for direct measurements of the carrier lifetime and diffusion coefficient D in high-resistivity single crystal CdTe (codoped with In and Er). The bulk carrier lifetime t decreased from 670 +/-50 ns to 60 +/- 10 ns with increase of excess carrier density N from 1016 to 5 x 1018cm-3 due to the excitation-dependent radiative recombination rate. In this N range, the carrier diffusion length dropped from 14 um to 6 um due to lifetime decrease. Modeling of in-depth (axial) and in-plane (lateral) carrier diffusion provided the value of surface recombination velocity S = 6 x 105 cm/s for the untreated surface. At even higher excitations, in the 1019-3 x 1020 cm-3 density range, D increase from 5 to 20 cm^2/s due to carrier degeneracy was observed.},
doi = {10.1063/1.5010780},
journal = {Journal of Applied Physics},
number = 2,
volume = 123,
place = {United States},
year = {Sun Jan 14 00:00:00 EST 2018},
month = {Sun Jan 14 00:00:00 EST 2018}
}

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Works referenced in this record:

Determination of bound-electronic and free-carrier nonlinearities in ZnSe, GaAs, CdTe, and ZnTe
journal, January 1992

  • Said, A. A.; Sheik-Bahae, M.; Hagan, D. J.
  • Journal of the Optical Society of America B, Vol. 9, Issue 3, p. 405-414
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