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Title: Simulation and laboratory test results of 3D CMS pixel detectors for HL-LHC

Abstract

The CMS pixel detector is the innermost tracking device at the LHC, reconstructing interaction vertices and charged particle trajectories. The current planar sensors located in the innermost layer of the pixel detector will be exposed to very high fluences which will degrade their performances. As a possible replacement for planar pixel sensors in the High Luminosity-LHC (HL-LHC), 3D silicon technology is under consideration due to its expected good performance in harsh radiation environments. Studies are also in progress for using 3D silicon pixel detectors in near-beam proton spectrometers at the LHC. Deep Reactive Ion Etching (DRIE) plays a key role in fabricating 3D silicon detectors in which readout and ohmic electrodes are processed through the silicon substrate instead of being implanted on the silicon surface. 3D pixel devices considered in this study were processed at FBK (Trento, Italy), bump bonded to the CMS pixel readout chip, and characterized in the laboratory. Numerical simulations were also carried out. We report on selected results from laboratory measurements and TCAD simulations.

Authors:
 [1];  [1];  [1];  [2];  [2];  [3];  [3];  [4];  [1];  [1];  [1];  [5];  [6];  [6];  [1];  [6]
  1. Purdue U.
  2. Trento U.
  3. INFN, Turin
  4. Rio de Janeiro State U.
  5. Fond. Bruno Kessler, Povo
  6. Fermilab
Publication Date:
Research Org.:
Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), High Energy Physics (HEP) (SC-25)
OSTI Identifier:
1419036
Report Number(s):
FERMILAB-PUB-12-863-CD
Journal ID: ISSN 1748-0221; 1185971
DOE Contract Number:  
AC02-07CH11359
Resource Type:
Journal Article
Journal Name:
Journal of Instrumentation
Additional Journal Information:
Journal Volume: 7; Journal Issue: 8; Journal ID: ISSN 1748-0221
Publisher:
Institute of Physics (IOP)
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY

Citation Formats

Alagoz, E., Bubna, M., Krzywda, A., Dalla Betta, G. F., Povoli, M., Obertino, M. M., Solano, A., Vilela Pereira, A., Arndt, K., Bolla, G., Bortoletto, D., Boscardin, M., Kwan, S., Rivera, R., Shipsey, I., and Uplegger, L. Simulation and laboratory test results of 3D CMS pixel detectors for HL-LHC. United States: N. p., 2012. Web. doi:10.1088/1748-0221/7/08/P08023.
Alagoz, E., Bubna, M., Krzywda, A., Dalla Betta, G. F., Povoli, M., Obertino, M. M., Solano, A., Vilela Pereira, A., Arndt, K., Bolla, G., Bortoletto, D., Boscardin, M., Kwan, S., Rivera, R., Shipsey, I., & Uplegger, L. Simulation and laboratory test results of 3D CMS pixel detectors for HL-LHC. United States. doi:10.1088/1748-0221/7/08/P08023.
Alagoz, E., Bubna, M., Krzywda, A., Dalla Betta, G. F., Povoli, M., Obertino, M. M., Solano, A., Vilela Pereira, A., Arndt, K., Bolla, G., Bortoletto, D., Boscardin, M., Kwan, S., Rivera, R., Shipsey, I., and Uplegger, L. Wed . "Simulation and laboratory test results of 3D CMS pixel detectors for HL-LHC". United States. doi:10.1088/1748-0221/7/08/P08023. https://www.osti.gov/servlets/purl/1419036.
@article{osti_1419036,
title = {Simulation and laboratory test results of 3D CMS pixel detectors for HL-LHC},
author = {Alagoz, E. and Bubna, M. and Krzywda, A. and Dalla Betta, G. F. and Povoli, M. and Obertino, M. M. and Solano, A. and Vilela Pereira, A. and Arndt, K. and Bolla, G. and Bortoletto, D. and Boscardin, M. and Kwan, S. and Rivera, R. and Shipsey, I. and Uplegger, L.},
abstractNote = {The CMS pixel detector is the innermost tracking device at the LHC, reconstructing interaction vertices and charged particle trajectories. The current planar sensors located in the innermost layer of the pixel detector will be exposed to very high fluences which will degrade their performances. As a possible replacement for planar pixel sensors in the High Luminosity-LHC (HL-LHC), 3D silicon technology is under consideration due to its expected good performance in harsh radiation environments. Studies are also in progress for using 3D silicon pixel detectors in near-beam proton spectrometers at the LHC. Deep Reactive Ion Etching (DRIE) plays a key role in fabricating 3D silicon detectors in which readout and ohmic electrodes are processed through the silicon substrate instead of being implanted on the silicon surface. 3D pixel devices considered in this study were processed at FBK (Trento, Italy), bump bonded to the CMS pixel readout chip, and characterized in the laboratory. Numerical simulations were also carried out. We report on selected results from laboratory measurements and TCAD simulations.},
doi = {10.1088/1748-0221/7/08/P08023},
journal = {Journal of Instrumentation},
issn = {1748-0221},
number = 8,
volume = 7,
place = {United States},
year = {2012},
month = {8}
}