Temperature dependence of interlayer coupling in perpendicular magnetic tunnel junctions with GdOx barriers

Newhouse-Illige, T.; Xu, Y. H.; Liu, Y. H.; Huang, S.; Kato, H.; Bi, C.; Xu, M.; LeRoy, B. J.; Wang, W. G.

doi:10.1063/1.5002586

Title: Temperature dependence of interlayer coupling in perpendicular magnetic tunnel junctions with GdOx barriers

Journal Article · Tue Feb 13 00:00:00 EST 2018 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.5002586· OSTI ID:1419001

Newhouse-Illige, T. ^[1]; Xu, Y. H. ^[1]; Liu, Y. H. ^[2]; Huang, S. ^[1]; Kato, H. ^[1]; Bi, C. ^[1]; Xu, M. ^[1]; LeRoy, B. J. ^[1]; Wang, W. G. ^[1]

Univ. of Arizona, Tucson, AZ (United States). Dept. of Physics
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Quantum Condensed Matter Division

Perpendicular magnetic tunnel junctions with GdOX tunneling barriers have shown a unique voltage controllable interlayer magnetic coupling effect. Here, we investigate the quality of the GdOX barrier and the coupling mechanism in these junctions by examining the temperature dependence of the tunneling magnetoresistance and the interlayer coupling from room temperature down to 11 K. The barrier is shown to be of good quality with the spin independent conductance only contributing a small portion, 14%, to the total room temperature conductance, similar to AlOX and MgO barriers. The interlayer coupling, however, shows an anomalously strong temperature dependence including sign changes below 80 K. This non-trivial temperature dependence is not described by previous models of interlayer coupling and may be due to the large induced magnetic moment of the Gd ions in the barrier.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)

Grant/Contract Number:: AC05-00OR22725; 1337371

OSTI ID:: 1419001

Alternate ID(s):: OSTI ID: 1420360; OSTI ID: 1465045

Journal Information:: Applied Physics Letters, Vol. 112, Issue 7; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 3 works

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