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Title: Temperature dependence of interlayer coupling in perpendicular magnetic tunnel junctions with GdOx barriers

Abstract

Perpendicular magnetic tunnel junctions with GdO X tunneling barriers have shown a unique voltage controllable interlayer magnetic coupling effect. Here we investigate the quality of the GdO X barrier and the coupling mechanism in these junctions by examining the temperature dependence of the tunneling magnetoresistance and the interlayer coupling from room temperature down to 11 K. The barrier is shown to be of good quality with the spin independent conductance only contributing a small portion, 14%, to the total room temperature conductance, similar to AlO X and MgO barriers. The interlayer coupling, however, shows an anomalously strong temperature dependence including sign changes below 80 K. This non-trivial temperature dependence is not described by previous models of interlayer coupling and may be due to the large induced magnetic moment of the Gd ions in the barrier.

Authors:
 [1];  [1];  [2];  [1];  [1];  [1];  [1];  [1];  [1]
  1. Univ. of Arizona, Tucson, AZ (United States). Dept. of Physics
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Quantum Condensed Matter Division
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); National Science Foundation (NSF)
OSTI Identifier:
1419001
Alternate Identifier(s):
OSTI ID: 1420360; OSTI ID: 1465045
Grant/Contract Number:  
AC05-00OR22725; 1337371
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 112; Journal Issue: 7; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Newhouse-Illige, T., Xu, Y. H., Liu, Y. H., Huang, S., Kato, H., Bi, C., Xu, M., LeRoy, B. J., and Wang, W. G. Temperature dependence of interlayer coupling in perpendicular magnetic tunnel junctions with GdOx barriers. United States: N. p., 2018. Web. doi:10.1063/1.5002586.
Newhouse-Illige, T., Xu, Y. H., Liu, Y. H., Huang, S., Kato, H., Bi, C., Xu, M., LeRoy, B. J., & Wang, W. G. Temperature dependence of interlayer coupling in perpendicular magnetic tunnel junctions with GdOx barriers. United States. doi:10.1063/1.5002586.
Newhouse-Illige, T., Xu, Y. H., Liu, Y. H., Huang, S., Kato, H., Bi, C., Xu, M., LeRoy, B. J., and Wang, W. G. Tue . "Temperature dependence of interlayer coupling in perpendicular magnetic tunnel junctions with GdOx barriers". United States. doi:10.1063/1.5002586.
@article{osti_1419001,
title = {Temperature dependence of interlayer coupling in perpendicular magnetic tunnel junctions with GdOx barriers},
author = {Newhouse-Illige, T. and Xu, Y. H. and Liu, Y. H. and Huang, S. and Kato, H. and Bi, C. and Xu, M. and LeRoy, B. J. and Wang, W. G.},
abstractNote = {Perpendicular magnetic tunnel junctions with GdOX tunneling barriers have shown a unique voltage controllable interlayer magnetic coupling effect. Here we investigate the quality of the GdOX barrier and the coupling mechanism in these junctions by examining the temperature dependence of the tunneling magnetoresistance and the interlayer coupling from room temperature down to 11 K. The barrier is shown to be of good quality with the spin independent conductance only contributing a small portion, 14%, to the total room temperature conductance, similar to AlOX and MgO barriers. The interlayer coupling, however, shows an anomalously strong temperature dependence including sign changes below 80 K. This non-trivial temperature dependence is not described by previous models of interlayer coupling and may be due to the large induced magnetic moment of the Gd ions in the barrier.},
doi = {10.1063/1.5002586},
journal = {Applied Physics Letters},
number = 7,
volume = 112,
place = {United States},
year = {Tue Feb 13 00:00:00 EST 2018},
month = {Tue Feb 13 00:00:00 EST 2018}
}

Journal Article:
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Works referenced in this record:

Spintronics: A Spin-Based Electronics Vision for the Future
journal, November 2001

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