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Title: Hexagonal boron nitride neutron detectors with high detection efficiencies

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.5017979· OSTI ID:1418973

Here, neutron detectors fabricated from 10B enriched hexagonal boron nitride (h-10BN or h-BN) epilayers have demonstrated the highest thermal neutron detection efficiency among solid-state neutron detectors to date at about 53%. In this work, photoconductive-like vertical detectors with a detection area of 1 × 1 mm2 were fabricated from 50 μm thick free-standing h-BN epilayers using Ni/Au and Ti/Al bilayers as ohmic contacts. Leakage currents, mobility-lifetime (μτ) products under UV photoexcitation, and neutron detection efficiencies have been measured for a total of 16 different device configurations. The results have unambiguously identified that detectors incorporating the Ni/Au bilayer on both surfaces as ohmic contacts and using the negatively biased top surface for neutron irradiation are the most desired device configurations. It was noted that high growth temperatures of h-10BN epilayers on sapphire substrates tend to yield a higher concentration of oxygen impurities near the bottom surface, leading to a better device performance by the chosen top surface for irradiation than by the bottom. Preferential scattering of oxygen donors tends to reduce the mobility of holes more than that of electrons, making the biasing scheme with the ability of rapidly extracting holes at the irradiated surface while leaving the electrons to travel a large average distance inside the detector at a preferred choice. When measured against a calibrated 6LiF filled micro-structured semiconductor neutron detector, it was shown that the optimized configuration has pushed the detection efficiency of h-BN neutron detectors to 58%. These detailed studies also provided a better understanding of growth-mediated impurities in h-BN epilayers and their effects on the charge collection and neutron detection efficiencies.

Research Organization:
Texas Tech Univ., Lubbock, TX (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
Grant/Contract Number:
NA0002927
OSTI ID:
1418973
Alternate ID(s):
OSTI ID: 1417780
Journal Information:
Journal of Applied Physics, Vol. 123, Issue 4; ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 35 works
Citation information provided by
Web of Science

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Cited By (8)

Photonics with hexagonal boron nitride journal July 2019
Origin and roles of oxygen impurities in hexagonal boron nitride epilayers journal April 2018
Effects of surface recombination on the charge collection in h-BN neutron detectors journal March 2019
Lateral charge carrier transport properties of B-10 enriched hexagonal BN thick epilayers journal August 2019
High sensitivity hexagonal boron nitride lateral neutron detectors journal June 2019
Critical thickness of hexagonal GaBN/BN heterostructures journal May 2019
Anisotropic index of refraction and structural properties of hexagonal boron nitride epilayers probed by spectroscopic ellipsometry journal February 2020
From 2-D to 0-D Boron Nitride Materials, The Next Challenge journal November 2019

Figures / Tables (8)


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