Optical properties of implanted Xe color centers in diamond

Sandstrom, Russell; Ke, Li; Martin, Aiden; Wang, Ziyu; Kianinia, Mehran; Green, Ben; Gao, Wei-bo; Aharonovich, Igor

doi:10.1016/j.optcom.2017.11.064

Title: Optical properties of implanted Xe color centers in diamond

Abstract

Optical properties of color centers in diamond have been the subject of intense research due to their promising applications in quantum photonics. Here in this work we study the optical properties of Xe related color centers implanted into nitrogen rich (type IIA) and an ultrapure, electronic grade diamond. The Xe defect has two zero phonon lines at 794 nm and 811 nm, which can be effectively excited using both green and red excitation, however, its emission in the nitrogen rich diamond is brighter. Near resonant excitation is performed at cryogenic temperatures and luminescence is probed under strong magnetic field. Finally, our results are important towards the understanding of the Xe related defect and other near infrared color centers in diamond.

Authors:

Sandstrom, Russell ^[1]; Ke, Li ^[2]; Martin, Aiden ^[3]; Wang, Ziyu ^[2]; Kianinia, Mehran ^[1]; Green, Ben ^[4]; Gao, Wei-bo ^[2]; Aharonovich, Igor ^[1]

Univ. of Technology Sydney, Ultimo, NSW (Australia). School of Mathematical and Physical Sciences
Nanyang Technological Univ. (Singapore). School of Physical and Mathematical Sciences, Division of Physics and Applied Physics
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Univ. of Warwick, Coventry (United Kingdom). Dept. of Physics

Publication Date:: Wed Dec 20 00:00:00 EST 2017

Research Org.:: Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

Sponsoring Org.:: USDOE; Australian Research Council (ARC); Asian Office of Aerospace Research and Development

OSTI Identifier:: 1418933

Alternate Identifier(s):: OSTI ID: 1495932

Report Number(s):: LLNL-JRNL-727262
Journal ID: ISSN 0030-4018

Grant/Contract Number:: AC52-07NA27344; FA2386-17-1-4064

Resource Type:: Journal Article: Accepted Manuscript

Journal Name:: Optics Communications

Additional Journal Information:: Journal Volume: 411; Journal Issue: C; Journal ID: ISSN 0030-4018

Publisher:: Elsevier

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS

Citation Formats


                    Sandstrom, Russell, Ke, Li, Martin, Aiden, Wang, Ziyu, Kianinia, Mehran, Green, Ben, Gao, Wei-bo, and Aharonovich, Igor. Optical properties of implanted Xe color centers in diamond.  United States: N. p., 2017. 
        Web.  doi:10.1016/j.optcom.2017.11.064.

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                    Sandstrom, Russell, Ke, Li, Martin, Aiden, Wang, Ziyu, Kianinia, Mehran, Green, Ben, Gao, Wei-bo, & Aharonovich, Igor. Optical properties of implanted Xe color centers in diamond.  United States.  https://doi.org/10.1016/j.optcom.2017.11.064

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                    Sandstrom, Russell, Ke, Li, Martin, Aiden, Wang, Ziyu, Kianinia, Mehran, Green, Ben, Gao, Wei-bo, and Aharonovich, Igor. 2017.  
        "Optical properties of implanted Xe color centers in diamond".  United States.  https://doi.org/10.1016/j.optcom.2017.11.064.  https://www.osti.gov/servlets/purl/1418933.

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@article{osti_1418933,

  title        = {Optical properties of implanted Xe color centers in diamond},

  author       = {Sandstrom, Russell and Ke, Li and Martin, Aiden and Wang, Ziyu and Kianinia, Mehran and Green, Ben and Gao, Wei-bo and Aharonovich, Igor},

  abstractNote = {Optical properties of color centers in diamond have been the subject of intense research due to their promising applications in quantum photonics. Here in this work we study the optical properties of Xe related color centers implanted into nitrogen rich (type IIA) and an ultrapure, electronic grade diamond. The Xe defect has two zero phonon lines at 794 nm and 811 nm, which can be effectively excited using both green and red excitation, however, its emission in the nitrogen rich diamond is brighter. Near resonant excitation is performed at cryogenic temperatures and luminescence is probed under strong magnetic field. Finally, our results are important towards the understanding of the Xe related defect and other near infrared color centers in diamond.},

  doi          = {10.1016/j.optcom.2017.11.064},

  url          = {https://www.osti.gov/biblio/1418933},
  journal      = {Optics Communications},

  issn         = {0030-4018},

  number       = C,

  volume       = 411,

  place        = {United States},

  year         = {Wed Dec 20 00:00:00 EST 2017},

  month        = {Wed Dec 20 00:00:00 EST 2017}

}

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https://doi.org/10.1016/j.optcom.2017.11.064

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Cited by: 10 works

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Figures / Tables:

Figure 1: (a) 500 keV ¹²⁹Xe ions were implanted into two separate diamonds – electronic grade with ~ ppb nitrogen concentration and type IIA with ~ppm nitrogen concentration. The doses are given in ions/cm² (b) Implantation depth profile of 500 keV ¹²⁹Xe ions into single crystal diamond calculated using themore »

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Works referencing / citing this record:

On the route to produce conductive Ni-related color centers in CVD-grown diamond
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Figures / Tables found in this record:

Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.

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Title: Optical properties of implanted Xe color centers in diamond

Abstract

Citation Formats

Figures / Tables:

Electrically driven single-photon source at room temperature in diamond journal, April 2012

Solid-state single-photon emitters journal, September 2016

Diamond NV centers for quantum computing and quantum networks journal, February 2013

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Quantum nanophotonics in diamond [Invited] journal, January 2016

The nitrogen-vacancy colour centre in diamond journal, July 2013

Coherent control of a strongly driven silicon vacancy optical transition in diamond journal, February 2017

Ultrafast all-optical coherent control of single silicon vacancy colour centres in diamond journal, November 2016

Electronic Structure of the Silicon Vacancy Color Center in Diamond journal, January 2014

Photophysics of single silicon vacancy centers in diamond: implications for single photon emission journal, January 2012

Germanium-Vacancy Single Color Centers in Diamond journal, August 2015

Observation of the Ge-vacancy color center in microcrystalline diamond films journal, June 2015

Secure quantum key distribution journal, July 2014

Photonic quantum technologies journal, December 2009

Diamond light emitting diode activated with Xe optical centers journal, February 2006

Photoluminescence and Raman studies of Xe ion-implanted diamonds: Dependence on implantation dose journal, December 2009

Polarization of luminescence and site symmetry of the Xe center in diamond journal, July 2007

High energy ion implantation into diamond and cubic boron nitride journal, January 1992

Laser-induced luminescence of xenon implanted natural diamond journal, May 2004

Thermodynamic stability of neutral Xe defects in diamond journal, August 2010

SRIM – The stopping and range of ions in matter (2010) journal, June 2010

Silicon-Vacancy Color Centers in Nanodiamonds: Cathodoluminescence Imaging Markers in the Near Infrared journal, March 2014

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Quantum nanophotonics in diamond [Invited]
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The nitrogen-vacancy colour centre in diamond
journal, July 2013

Coherent control of a strongly driven silicon vacancy optical transition in diamond
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Ultrafast all-optical coherent control of single silicon vacancy colour centres in diamond
journal, November 2016

Electronic Structure of the Silicon Vacancy Color Center in Diamond
journal, January 2014

Photophysics of single silicon vacancy centers in diamond: implications for single photon emission
journal, January 2012

Germanium-Vacancy Single Color Centers in Diamond
journal, August 2015

Observation of the Ge-vacancy color center in microcrystalline diamond films
journal, June 2015

Secure quantum key distribution
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Diamond light emitting diode activated with Xe optical centers
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Photoluminescence and Raman studies of Xe ion-implanted diamonds: Dependence on implantation dose
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Polarization of luminescence and site symmetry of the Xe center in diamond
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High energy ion implantation into diamond and cubic boron nitride
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Laser-induced luminescence of xenon implanted natural diamond
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Thermodynamic stability of neutral Xe defects in diamond
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SRIM – The stopping and range of ions in matter (2010)
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Silicon-Vacancy Color Centers in Nanodiamonds: Cathodoluminescence Imaging Markers in the Near Infrared
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Array of bright silicon-vacancy centers in diamond fabricated by low-energy focused ion beam implantation
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