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Title: Gallium beam lithography for superconductive structure formation

Abstract

The present invention relates to the use of gallium beam lithography to form superconductive structures. Generally, the method includes exposing a surface to gallium to form an implanted region and then removing material adjacent to and/or below that implanted region. In particular embodiments, the methods herein provide microstructures and nanostructures in any useful substrate, such as those including niobium, tantalum, tungsten, or titanium.

Inventors:
;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1418806
Patent Number(s):
9,882,113
Application Number:
14/742,505
Assignee:
National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM) SNL-A
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Patent File Date: 2015 Jun 17
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Henry, Michael David, and Lewis, Rupert M. Gallium beam lithography for superconductive structure formation. United States: N. p., 2018. Web.
Henry, Michael David, & Lewis, Rupert M. Gallium beam lithography for superconductive structure formation. United States.
Henry, Michael David, and Lewis, Rupert M. Tue . "Gallium beam lithography for superconductive structure formation". United States. https://www.osti.gov/servlets/purl/1418806.
@article{osti_1418806,
title = {Gallium beam lithography for superconductive structure formation},
author = {Henry, Michael David and Lewis, Rupert M.},
abstractNote = {The present invention relates to the use of gallium beam lithography to form superconductive structures. Generally, the method includes exposing a surface to gallium to form an implanted region and then removing material adjacent to and/or below that implanted region. In particular embodiments, the methods herein provide microstructures and nanostructures in any useful substrate, such as those including niobium, tantalum, tungsten, or titanium.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {1}
}

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Works referenced in this record:

Processing of silicon nanostructures by Ga+ resistless lithography and reactive ion etching
journal, October 2013


Direct write patterning of titanium films using focused ion beam implantation and plasma etching
journal, February 1997