Solution-Processed n-Type Graphene Doping for Cathode in Inverted Polymer Light-Emitting Diodes
- Pohang Univ. of Science and Technology (POSTECH) (Korea, Republic of). Dept. of Materials Science and Engineering
- Seoul National Univ. (Korea, Republic of). Dept. of Materials Science and Engineering; Univ. of California, Los Angeles, CA (United States). Dept. of Materials Science and Engineering; Univ. of California, Los Angeles, CA (United States). California NanoSystems Inst.
- Seoul National Univ. (Korea, Republic of). Dept. of Materials Science and Engineering; Seoul National Univ. (Korea, Republic of). Research Inst. of Advanced Materials; Seoul National Univ. (Korea, Republic of). BK21 PLUS SNU Materials Division for Educating Creative Global Leaders
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Seoul National Univ. (Korea, Republic of). Dept. of Materials Science and Engineering
- Seoul National Univ. (Korea, Republic of). Program in Nano Science and Technology, Graduate School of Convergence Science and Technology
- Seoul National Univ. (Korea, Republic of). Dept. of Materials Science and Engineering; Seoul National Univ. (Korea, Republic of). Research Inst. of Advanced Materials
- Seoul National Univ. (Korea, Republic of). Program in Nano Science and Technology, Graduate School of Convergence Science and Technology; Seoul National Univ. (Korea, Republic of). Dept. of Chemistry
n-Type doping with (4-(1,3-dimethyl-2,3-dihydro-1H-benzoimidazol-2-yl)phenyl) dimethylamine (N-DMBI) reduces a work function (WF) of graphene by ~0.45 eV without significant reduction of optical transmittance. Solution process of N-DMBI on graphene provides effective n-type doping effect and air-stability at the same time. Although neutral N-DMBI act as an electron receptor leaving the graphene p-doped, radical N-DMBI acts as an electron donator leaving the graphene n-doped, which is demonstrated by density functional theory. We also verify the suitability of N-DMBI-doped n-type graphene for use as a cathode in inverted polymer light-emitting diodes (PLEDs) by using various analytical methods. Inverted PLEDs using a graphene cathode doped with N-DMBI radical showed dramatically improved device efficiency (~13.8 cd/A) than did inverted PLEDs with pristine graphene (~2.74 cd/A). Finally, N-DMBI-doped graphene can provide a practical way to produce graphene cathodes with low WF in various organic optoelectronics.
- Research Organization:
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- AC52-06NA25396
- OSTI ID:
- 1418760
- Report Number(s):
- LA-UR-16-28960
- Journal Information:
- ACS Applied Materials and Interfaces, Vol. 10, Issue 5; ISSN 1944-8244
- Publisher:
- American Chemical Society (ACS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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