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Title: Solution-Processed n-Type Graphene Doping for Cathode in Inverted Polymer Light-Emitting Diodes

Journal Article · · ACS Applied Materials and Interfaces
 [1];  [2];  [3];  [4];  [1];  [5];  [6];  [7]; ORCiD logo [8]; ORCiD logo [4]; ORCiD logo [7]
  1. Pohang Univ. of Science and Technology (POSTECH) (Korea, Republic of). Dept. of Materials Science and Engineering
  2. Seoul National Univ. (Korea, Republic of). Dept. of Materials Science and Engineering; Univ. of California, Los Angeles, CA (United States). Dept. of Materials Science and Engineering; Univ. of California, Los Angeles, CA (United States). California NanoSystems Inst.
  3. Seoul National Univ. (Korea, Republic of). Dept. of Materials Science and Engineering; Seoul National Univ. (Korea, Republic of). Research Inst. of Advanced Materials; Seoul National Univ. (Korea, Republic of). BK21 PLUS SNU Materials Division for Educating Creative Global Leaders
  4. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
  5. Seoul National Univ. (Korea, Republic of). Dept. of Materials Science and Engineering
  6. Seoul National Univ. (Korea, Republic of). Program in Nano Science and Technology, Graduate School of Convergence Science and Technology
  7. Seoul National Univ. (Korea, Republic of). Dept. of Materials Science and Engineering; Seoul National Univ. (Korea, Republic of). Research Inst. of Advanced Materials
  8. Seoul National Univ. (Korea, Republic of). Program in Nano Science and Technology, Graduate School of Convergence Science and Technology; Seoul National Univ. (Korea, Republic of). Dept. of Chemistry

n-Type doping with (4-(1,3-dimethyl-2,3-dihydro-1H-benzoimidazol-2-yl)phenyl) dimethylamine (N-DMBI) reduces a work function (WF) of graphene by ~0.45 eV without significant reduction of optical transmittance. Solution process of N-DMBI on graphene provides effective n-type doping effect and air-stability at the same time. Although neutral N-DMBI act as an electron receptor leaving the graphene p-doped, radical N-DMBI acts as an electron donator leaving the graphene n-doped, which is demonstrated by density functional theory. We also verify the suitability of N-DMBI-doped n-type graphene for use as a cathode in inverted polymer light-emitting diodes (PLEDs) by using various analytical methods. Inverted PLEDs using a graphene cathode doped with N-DMBI radical showed dramatically improved device efficiency (~13.8 cd/A) than did inverted PLEDs with pristine graphene (~2.74 cd/A). Finally, N-DMBI-doped graphene can provide a practical way to produce graphene cathodes with low WF in various organic optoelectronics.

Research Organization:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
AC52-06NA25396
OSTI ID:
1418760
Report Number(s):
LA-UR-16-28960
Journal Information:
ACS Applied Materials and Interfaces, Vol. 10, Issue 5; ISSN 1944-8244
Publisher:
American Chemical Society (ACS)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 18 works
Citation information provided by
Web of Science

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Cited By (3)

The charge carrier dynamics, efficiency and stability of two-dimensional material-based perovskite solar cells journal January 2019
Efficient n-Dopants and Their Roles in Organic Electronics journal July 2018
Excellent carrier transport materials produced by controlled molecular stacking and their application in flexible organic electronic devices journal January 2019

Figures / Tables (5)


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