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Title: Growth of high-quality Bi 2 Se 3 topological insulators using (Bi 1-x In x ) 2 Se 3 buffer layers

Authors:
 [1];  [1];  [1]
  1. Department of Materials Science and Engineering, University of Delaware, 127 The Green, Room 201, Newark Delaware 19716
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1418715
Grant/Contract Number:  
SC0016380; SC0017801
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics
Additional Journal Information:
Journal Name: Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics Journal Volume: 36 Journal Issue: 2; Journal ID: ISSN 2166-2746
Publisher:
American Vacuum Society
Country of Publication:
United States
Language:
English

Citation Formats

Wang, Yong, Ginley, Theresa P., and Law, Stephanie. Growth of high-quality Bi 2 Se 3 topological insulators using (Bi 1-x In x ) 2 Se 3 buffer layers. United States: N. p., 2018. Web. doi:10.1116/1.5015968.
Wang, Yong, Ginley, Theresa P., & Law, Stephanie. Growth of high-quality Bi 2 Se 3 topological insulators using (Bi 1-x In x ) 2 Se 3 buffer layers. United States. doi:10.1116/1.5015968.
Wang, Yong, Ginley, Theresa P., and Law, Stephanie. Thu . "Growth of high-quality Bi 2 Se 3 topological insulators using (Bi 1-x In x ) 2 Se 3 buffer layers". United States. doi:10.1116/1.5015968.
@article{osti_1418715,
title = {Growth of high-quality Bi 2 Se 3 topological insulators using (Bi 1-x In x ) 2 Se 3 buffer layers},
author = {Wang, Yong and Ginley, Theresa P. and Law, Stephanie},
abstractNote = {},
doi = {10.1116/1.5015968},
journal = {Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics},
number = 2,
volume = 36,
place = {United States},
year = {Thu Mar 01 00:00:00 EST 2018},
month = {Thu Mar 01 00:00:00 EST 2018}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on January 30, 2019
Publisher's Accepted Manuscript

Citation Metrics:
Cited by: 2 works
Citation information provided by
Web of Science

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