Growth of high-quality Bi2Se3 topological insulators using (Bi1-xInx) 2Se3 buffer layers
- Univ. of Delaware, Newark, DE (United States)
Here, the authors first report on the optimum growth parameters for Bi1-xInx) 2Se3 alloys of arbitrary composition using molecular beam epitaxy. It is found that smooth, single-phase films can only be obtained by using a sequential growth and annealing method to seed the film, after which normal codeposition growth can be used. The topological insulator Bi2Se3 is then grown on top of various (Bi1-xInx) 2Se3 buffers and the electrical properties measured. For Bi2Se3 films grown on high-quality buffer layers, the mobility is greatly enhanced and the carrier density reduced compared to growth directly on sapphire substrates, indicating a significant improvement in film quality. The use of an almost lattice-matched trivially insulating buffer layer is therefore vital to the growth of high-quality topological insulators on arbitrary substrates.
- Research Organization:
- Univ. of Delaware, Newark, DE (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- SC0017801; SC0016380
- OSTI ID:
- 1593345
- Alternate ID(s):
- OSTI ID: 1418715
- Journal Information:
- Journal of Vacuum Science and Technology B, Vol. 36, Issue 2; ISSN 2166-2746
- Publisher:
- American Vacuum Society / AIPCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
Hybrid reflections from multiple x-ray scattering in epitaxial bismuth telluride topological insulator films
|
journal | March 2018 |
| Hybrid reflections from multiple x-ray scattering in epitaxial bismuth telluride topological insulator films | preprint | January 2020 |
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