skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Low temperature Spalling of Silicon: A crack Propagation Study

Authors:
; ; ; ;
Publication Date:
Research Org.:
Arizona State Univ., Tempe, AZ (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
OSTI Identifier:
1418651
Report Number(s):
DOE-ASU-07367-2
DOE Contract Number:
EE0007367
Resource Type:
Other
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; kerfless, wafering, crack velocity

Citation Formats

Guimera Coll, Pablo, Uberg Naerland, Tine, Stuckelberger, Michael, Stoddard, Nathan, and Bertoni, Mariana. Low temperature Spalling of Silicon: A crack Propagation Study. United States: N. p., 2017. Web.
Guimera Coll, Pablo, Uberg Naerland, Tine, Stuckelberger, Michael, Stoddard, Nathan, & Bertoni, Mariana. Low temperature Spalling of Silicon: A crack Propagation Study. United States.
Guimera Coll, Pablo, Uberg Naerland, Tine, Stuckelberger, Michael, Stoddard, Nathan, and Bertoni, Mariana. Thu . "Low temperature Spalling of Silicon: A crack Propagation Study". United States. doi:. https://www.osti.gov/servlets/purl/1418651.
@article{osti_1418651,
title = {Low temperature Spalling of Silicon: A crack Propagation Study},
author = {Guimera Coll, Pablo and Uberg Naerland, Tine and Stuckelberger, Michael and Stoddard, Nathan and Bertoni, Mariana},
abstractNote = {},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu Jun 08 00:00:00 EDT 2017},
month = {Thu Jun 08 00:00:00 EDT 2017}
}