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Title: Low temperature spalling of silicon: A crack propagation study

Abstract

Spalling is a promising kerfless method for cutting thin silicon wafers while doubling the yield of a silicon ingot. The main obstacle in this technology is the high total thickness variation of the spalled wafers, often as high as 100% of the wafer thickness. It has been suggested before that a strong correlation exists between low crack velocities and a smooth surface, but this correlation has never been shown during a spalling process in silicon. The reason lies in the challenge associated to measuring such velocities. In this contribution, we present a new approach to assess, in real time, the crack velocity as it propagates during a low temperature spalling process. Understanding the relationship between crack velocity and surface roughness during spalling can pave the way to attain full control on the surface quality of the spalled wafer.

Authors:
; ; ;
Publication Date:
Research Org.:
Arizona State Univ., Tempe, AZ (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Office of Technology Development (EE-20)
OSTI Identifier:
1418650
Report Number(s):
DOE-ASU-7367
DOE Contract Number:  
EE0007367
Resource Type:
Other
Resource Relation:
Related Information: N/A None available yet
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; spalling, kerfless, wafering, crack velocity

Citation Formats

Bertoni, Mariana, Uberg Naerland, Tine, Stoddard, Nathan, and Guimera Coll, Pablo. Low temperature spalling of silicon: A crack propagation study. United States: N. p., 2017. Web.
Bertoni, Mariana, Uberg Naerland, Tine, Stoddard, Nathan, & Guimera Coll, Pablo. Low temperature spalling of silicon: A crack propagation study. United States.
Bertoni, Mariana, Uberg Naerland, Tine, Stoddard, Nathan, and Guimera Coll, Pablo. Thu . "Low temperature spalling of silicon: A crack propagation study". United States. doi:. https://www.osti.gov/servlets/purl/1418650.
@article{osti_1418650,
title = {Low temperature spalling of silicon: A crack propagation study},
author = {Bertoni, Mariana and Uberg Naerland, Tine and Stoddard, Nathan and Guimera Coll, Pablo},
abstractNote = {Spalling is a promising kerfless method for cutting thin silicon wafers while doubling the yield of a silicon ingot. The main obstacle in this technology is the high total thickness variation of the spalled wafers, often as high as 100% of the wafer thickness. It has been suggested before that a strong correlation exists between low crack velocities and a smooth surface, but this correlation has never been shown during a spalling process in silicon. The reason lies in the challenge associated to measuring such velocities. In this contribution, we present a new approach to assess, in real time, the crack velocity as it propagates during a low temperature spalling process. Understanding the relationship between crack velocity and surface roughness during spalling can pave the way to attain full control on the surface quality of the spalled wafer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu Jun 08 00:00:00 EDT 2017},
month = {Thu Jun 08 00:00:00 EDT 2017}
}