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Title: A universal symmetry criterion for the design of high performance ferroic materials

Authors:
ORCiD logo; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1418380
Grant/Contract Number:
SC0001258
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Acta Materialia
Additional Journal Information:
Journal Volume: 127; Journal Issue: C; Related Information: CHORUS Timestamp: 2018-01-27 19:56:40; Journal ID: ISSN 1359-6454
Publisher:
Elsevier
Country of Publication:
United States
Language:
English

Citation Formats

Gao, Yipeng, Dregia, Suliman A., and Wang, Yunzhi. A universal symmetry criterion for the design of high performance ferroic materials. United States: N. p., 2017. Web. doi:10.1016/j.actamat.2017.01.037.
Gao, Yipeng, Dregia, Suliman A., & Wang, Yunzhi. A universal symmetry criterion for the design of high performance ferroic materials. United States. doi:10.1016/j.actamat.2017.01.037.
Gao, Yipeng, Dregia, Suliman A., and Wang, Yunzhi. Sat . "A universal symmetry criterion for the design of high performance ferroic materials". United States. doi:10.1016/j.actamat.2017.01.037.
@article{osti_1418380,
title = {A universal symmetry criterion for the design of high performance ferroic materials},
author = {Gao, Yipeng and Dregia, Suliman A. and Wang, Yunzhi},
abstractNote = {},
doi = {10.1016/j.actamat.2017.01.037},
journal = {Acta Materialia},
number = C,
volume = 127,
place = {United States},
year = {Sat Apr 01 00:00:00 EDT 2017},
month = {Sat Apr 01 00:00:00 EDT 2017}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1016/j.actamat.2017.01.037

Citation Metrics:
Cited by: 3works
Citation information provided by
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  • The influence of in-plane oxygen defects on the critical temperature, resistivity, and Hall coefficient was studied in YBa{sub 2}Cu{sub 3}O{sub 6+{ital x}} (YBCO) films with different oxygen contents ({ital T}{sub {ital c}0} ranging from 30 to 93 K) with emphasis on the underdoped {open_quote}{open_quote}spin-gap phase.{close_quote}{close_quote} A strong {ital T}{sub {ital c}} suppression was observed, but no influence of the defects on {open_quote}{open_quote}spin-gap{close_quote}{close_quote} features in the transport properties was found. A comparison is made with {ital T}{sub {ital c}} suppression by other in-plane defects such as Zn substitutions for Cu, Pr substitutions for Y in YBCO, and radiation defects in Bi-2201more » and Bi-2212 high-{ital T}{sub {ital c}} superconductors. {ital T}{sub {ital c}} suppression by defects is shown to occur in a universal way which is independent of the {ital T}{sub {ital c}0}, carrier concentration, and number of CuO{sub 2} planes per unit cell. It is shown that, independent of whether the in-plane defects induce localized magnetic moments or not, {ital T}{sub {ital c}} is a universal function of the impurity scattering rate, which can be described by the pair-breaking theory for potential scatterers in {ital d}-wave superconductors, but requires that the pair-breaking rate be a factor of 3 smaller than that suggested by the transport data. An alternative description of the {ital T}{sub {ital c}} suppression in terms of the phase fluctuation theory proposed recently by Emery and Kivelson is also discussed. {copyright} {ital 1996 The American Physical Society.}« less
  • Monitoring temperature regimes is an important part of ensuring the operational safety of a nuclear power plant. Therefore, high standards are imposed upon the reliability of the primary information on the heat field of the object obtained from different sensors, and it is urgent to develop methods of evaluating the metrological reliability of these sensors. THe main sources of thermometric information at nuclear power plants are contact temperature sensors, the most widely used of these being thermoelectric converters (TEC) and thermal resistance converters (TRC).
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  • We report the design, synthesis, and implemention in semiconducting polymers of a novel head-to-head linkage containing the TRTOR (3-alkyl-3'-alkoxy-2,2'-bithiophene) donor subunit having a single strategically optimized, planarizing noncovalent S···O interaction. Diverse complementary thermal, optical, electrochemical, X-ray scattering, electrical, photovoltaic, and electron microscopic characterization techniques are applied to establish structure-property correlations in a TRTOR-based polymer series. In comparison to monomers having double S···O interactions, replacing one alkoxy substituent with a less electron-donating alkyl one yields TRTOR-based polymers with significantly depressed (0.2-0.3 eV) HOMOs. Furthermore, the weaker single S···O interaction and greater TRTOR steric encumberance enhances materials processability without sacrificing backbone planarity.more » From another perspective, TRTOR has comparable electronic properties to ring-fused 5Hdithieno[ 3,2-b:2',3'-d]pyran (DTP) subunits, but a centrosymmetric geometry which promotes a more compact and ordered structure than bulkier, axisymmetric DTP. Compared to monosubstituted TTOR (3-alkoxy-2,2'-bithiophene), alkylation at the TRTOR bithiophene 3-position enhances conjugation and polymer crystallinity with contracted π-π stacking. Grazing incidence wide-angle X-ray scattering (GIWAXS) data reveal that the greater steric hindrance and the weaker single S···O interaction are not detrimental to close packing and high crystallinity. As a proof of materials design, copolymerizing TRTOR with phthalimides yields copolymers with promising thin-film transistor mobility as high as 0.42 cm2/(V·s) and 6.3% power conversion efficiency in polymer solar cells, the highest of any phthalimide copolymers reported to date. The depressed TRTOR HOMOs imbue these polymers with substantially increased Ion/Ioff ratios and Voc’s versus analogous subunits with multiple electron donating, planarizing alkoxy substituents. Implementing a head-to-head linkage with an alkyl/alkoxy substitution pattern and a single S···O interaction is a promising strategy for organic electronics materials design.« less