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Title: Detecting Fermi-level shifts by Auger electron spectroscopy in Si and GaAs

Journal Article · · Applied Surface Science
 [1];  [1];  [1];  [2];  [3];  [4];  [1];  [1]
  1. KU Leuven, Heverlee (Belgium)
  2. Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
  3. IBM Research Zurich, Ruschlikon (Switzerland)
  4. KU Leuven, Heverlee (Belgium); IMEC vzw, Heverlee (Belgium)
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In this study, changes in surface Fermi-level of Si and GaAs, caused by doping and cleaning, are investigated by Auger electron spectroscopy. Based on the Auger voltage contrast, we compared the Auger transition peak energy but with higher accuracy by using a more accurate analyzer and an improved peak position determination method. For silicon, a peak shift as large as 0.46 eV was detected when comparing a cleaned p-type and n-type wafer, which corresponds rather well with the theoretical difference in Fermi-levels. If no cleaning was applied, the peak position did not differ significantly for both wafer types, indicating Fermi-level pinning in the band gap. For GaAs, peak shifts were detected after cleaning with HF and (NH4)2S-solutions in an inert atmosphere (N2-gas). Although the (NH4)2S-cleaning in N2 is very efficient in removing the oxygen from the surface, the observed Ga- and As-peak shifts are smaller than those obtained after the HF-cleaning. It is shown that the magnitude of the shift is related to the surface composition. After Si-deposition on the (NH4)2S-cleaned surface, the Fermi-level shifts back to a similar position as observed for an as-received wafer, indicating that this combination is not successful in unpinning the Fermi-level of GaAs.

Research Organization:
Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
Sponsoring Organization:
USDOE
Grant/Contract Number:
AC05-76RL01830
OSTI ID:
1418021
Report Number(s):
PNNL-SA-130366; PII: S0169433218300801
Journal Information:
Applied Surface Science, Vol. 440; ISSN 0169-4332
Publisher:
ElsevierCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 5 works
Citation information provided by
Web of Science

Figures / Tables (10)

Figure 1(p. 5)figure Figure 1
Figure 2(p. 6)figure Figure 2
Figure 3(p. 7)figure Figure 3
Figure 4(p. 7)figure Figure 4
Figure 5(p. 8)figure Figure 5
Table 1(p. 8)table Table 1
Figure 6(p. 9)figure Figure 6
Figure 7(p. 10)figure Figure 7
Table 2(p. 10)table Table 2
Figure 8(p. 18)figure Figure 8

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Related Subjects

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
36 MATERIALS SCIENCE
Auger electron spectroscopy
semiconductor surface
Fermi level shifts
surface cleaning