Detecting Fermi-level shifts by Auger electron spectroscopy in Si and GaAs
Abstract
In this study, changes in surface Fermi-level of Si and GaAs, caused by doping and cleaning, are investigated by Auger electron spectroscopy. Based on the Auger voltage contrast, we compared the Auger transition peak energy but with higher accuracy by using a more accurate analyzer and an improved peak position determination method. For silicon, a peak shift as large as 0.46 eV was detected when comparing a cleaned p-type and n-type wafer, which corresponds rather well with the theoretical difference in Fermi-levels. If no cleaning was applied, the peak position did not differ significantly for both wafer types, indicating Fermi-level pinning in the band gap. For GaAs, peak shifts were detected after cleaning with HF and (NH4)2S-solutions in an inert atmosphere (N2-gas). Although the (NH4)2S-cleaning in N2 is very efficient in removing the oxygen from the surface, the observed Ga- and As-peak shifts are smaller than those obtained after the HF-cleaning. It is shown that the magnitude of the shift is related to the surface composition. After Si-deposition on the (NH4)2S-cleaned surface, the Fermi-level shifts back to a similar position as observed for an as-received wafer, indicating that this combination is not successful in unpinning the Fermi-level of GaAs.
- Authors:
-
- KU Leuven, Heverlee (Belgium)
- Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
- IBM Research Zurich, Ruschlikon (Switzerland)
- KU Leuven, Heverlee (Belgium); IMEC vzw, Heverlee (Belgium)
- Publication Date:
- Research Org.:
- Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1418021
- Report Number(s):
- PNNL-SA-130366
Journal ID: ISSN 0169-4332; PII: S0169433218300801
- Grant/Contract Number:
- AC05-76RL01830
- Resource Type:
- Journal Article: Accepted Manuscript
- Journal Name:
- Applied Surface Science
- Additional Journal Information:
- Journal Volume: 440; Journal ID: ISSN 0169-4332
- Publisher:
- Elsevier
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; 36 MATERIALS SCIENCE; Auger electron spectroscopy; semiconductor surface; Fermi level shifts; surface cleaning
Citation Formats
Debehets, J., Homm, P., Menghini, M., Chambers, S. A., Marchiori, C., Heyns, M., Locquet, J. P., and Seo, J. W. Detecting Fermi-level shifts by Auger electron spectroscopy in Si and GaAs. United States: N. p., 2018.
Web. doi:10.1016/J.APSUSC.2018.01.079.
Debehets, J., Homm, P., Menghini, M., Chambers, S. A., Marchiori, C., Heyns, M., Locquet, J. P., & Seo, J. W. Detecting Fermi-level shifts by Auger electron spectroscopy in Si and GaAs. United States. https://doi.org/10.1016/J.APSUSC.2018.01.079
Debehets, J., Homm, P., Menghini, M., Chambers, S. A., Marchiori, C., Heyns, M., Locquet, J. P., and Seo, J. W. 2018.
"Detecting Fermi-level shifts by Auger electron spectroscopy in Si and GaAs". United States. https://doi.org/10.1016/J.APSUSC.2018.01.079. https://www.osti.gov/servlets/purl/1418021.
@article{osti_1418021,
title = {Detecting Fermi-level shifts by Auger electron spectroscopy in Si and GaAs},
author = {Debehets, J. and Homm, P. and Menghini, M. and Chambers, S. A. and Marchiori, C. and Heyns, M. and Locquet, J. P. and Seo, J. W.},
abstractNote = {In this study, changes in surface Fermi-level of Si and GaAs, caused by doping and cleaning, are investigated by Auger electron spectroscopy. Based on the Auger voltage contrast, we compared the Auger transition peak energy but with higher accuracy by using a more accurate analyzer and an improved peak position determination method. For silicon, a peak shift as large as 0.46 eV was detected when comparing a cleaned p-type and n-type wafer, which corresponds rather well with the theoretical difference in Fermi-levels. If no cleaning was applied, the peak position did not differ significantly for both wafer types, indicating Fermi-level pinning in the band gap. For GaAs, peak shifts were detected after cleaning with HF and (NH4)2S-solutions in an inert atmosphere (N2-gas). Although the (NH4)2S-cleaning in N2 is very efficient in removing the oxygen from the surface, the observed Ga- and As-peak shifts are smaller than those obtained after the HF-cleaning. It is shown that the magnitude of the shift is related to the surface composition. After Si-deposition on the (NH4)2S-cleaned surface, the Fermi-level shifts back to a similar position as observed for an as-received wafer, indicating that this combination is not successful in unpinning the Fermi-level of GaAs.},
doi = {10.1016/J.APSUSC.2018.01.079},
url = {https://www.osti.gov/biblio/1418021},
journal = {Applied Surface Science},
issn = {0169-4332},
number = ,
volume = 440,
place = {United States},
year = {Fri Jan 12 00:00:00 EST 2018},
month = {Fri Jan 12 00:00:00 EST 2018}
}
Web of Science