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Title: Graphene layer formation at low substrate temperature on a metal and carbon based substrate

Abstract

A system and method for forming graphene layers on a substrate. The system and methods include direct growth of graphene on diamond and low temperature growth of graphene using a solid carbon source.

Inventors:
;
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1417969
Patent Number(s):
9,875,894
Application Number:
14/563,201
Assignee:
UChicago Argonne, LLC (Chicago, IL) ANL
DOE Contract Number:
AC02-06CH11357
Resource Type:
Patent
Resource Relation:
Patent File Date: 2014 Dec 08
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Sumant, Anirudha V., and Berman, Diana. Graphene layer formation at low substrate temperature on a metal and carbon based substrate. United States: N. p., 2018. Web.
Sumant, Anirudha V., & Berman, Diana. Graphene layer formation at low substrate temperature on a metal and carbon based substrate. United States.
Sumant, Anirudha V., and Berman, Diana. Tue . "Graphene layer formation at low substrate temperature on a metal and carbon based substrate". United States. doi:. https://www.osti.gov/servlets/purl/1417969.
@article{osti_1417969,
title = {Graphene layer formation at low substrate temperature on a metal and carbon based substrate},
author = {Sumant, Anirudha V. and Berman, Diana},
abstractNote = {A system and method for forming graphene layers on a substrate. The system and methods include direct growth of graphene on diamond and low temperature growth of graphene using a solid carbon source.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jan 23 00:00:00 EST 2018},
month = {Tue Jan 23 00:00:00 EST 2018}
}

Patent:

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