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Title: Iron and intrinsic deep level states in Ga 2O 3

Abstract

In this study, using a combination of deep level transient spectroscopy, secondary ion mass spectrometry, proton irradiation, and hybrid functional calculations, we identify two similar deep levels that are associated with Fe impurities and intrinsic defects in bulk crystals and molecular beam epitaxy and hydride vapor phase epitaxi-grown epilayers of β-Ga 2O 3. First, our results indicate that Fe Ga, and not an intrinsic defect, acts as the deep acceptor responsible for the often dominating E2 level at ~0.78 eV below the conduction band minimum. Second, by provoking additional intrinsic defect generation via proton irradiation, we identified the emergence of a new level, labeled as E2*, having the ionization energy very close to that of E2, but exhibiting an order of magnitude larger capture cross section. Importantly, the properties of E2* are found to be consistent with its intrinsic origin. As such, contradictory opinions of a long standing literature debate on either extrinsic or intrinsic origin of the deep acceptor in question converge accounting for possible contributions from E2 and E2* in different experimental conditions.

Authors:
ORCiD logo [1];  [2];  [1];  [1];  [3];  [3];  [3];  [1]
  1. Univ. of Oslo (Norway). Department of Physics/Centre for Materials Science and Nanotechnology
  2. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
  3. ABB Corporate Research, Segelhofstrasse (Switzerland)
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1417925
Alternate Identifier(s):
OSTI ID: 1458679
Report Number(s):
LLNL-JRNL-743968
Journal ID: ISSN 0003-6951; 898727
Grant/Contract Number:  
AC52-07NA27344
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 112; Journal Issue: 4; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Ingebrigtsen, M. E., Varley, J. B., Kuznetsov, A. Yu., Svensson, B. G., Alfieri, G., Mihaila, A., Badstubner, U., and Vines, L.. Iron and intrinsic deep level states in Ga2O3. United States: N. p., 2018. Web. doi:10.1063/1.5020134.
Ingebrigtsen, M. E., Varley, J. B., Kuznetsov, A. Yu., Svensson, B. G., Alfieri, G., Mihaila, A., Badstubner, U., & Vines, L.. Iron and intrinsic deep level states in Ga2O3. United States. doi:10.1063/1.5020134.
Ingebrigtsen, M. E., Varley, J. B., Kuznetsov, A. Yu., Svensson, B. G., Alfieri, G., Mihaila, A., Badstubner, U., and Vines, L.. Wed . "Iron and intrinsic deep level states in Ga2O3". United States. doi:10.1063/1.5020134.
@article{osti_1417925,
title = {Iron and intrinsic deep level states in Ga2O3},
author = {Ingebrigtsen, M. E. and Varley, J. B. and Kuznetsov, A. Yu. and Svensson, B. G. and Alfieri, G. and Mihaila, A. and Badstubner, U. and Vines, L.},
abstractNote = {In this study, using a combination of deep level transient spectroscopy, secondary ion mass spectrometry, proton irradiation, and hybrid functional calculations, we identify two similar deep levels that are associated with Fe impurities and intrinsic defects in bulk crystals and molecular beam epitaxy and hydride vapor phase epitaxi-grown epilayers of β-Ga2O3. First, our results indicate that FeGa, and not an intrinsic defect, acts as the deep acceptor responsible for the often dominating E2 level at ~0.78 eV below the conduction band minimum. Second, by provoking additional intrinsic defect generation via proton irradiation, we identified the emergence of a new level, labeled as E2*, having the ionization energy very close to that of E2, but exhibiting an order of magnitude larger capture cross section. Importantly, the properties of E2* are found to be consistent with its intrinsic origin. As such, contradictory opinions of a long standing literature debate on either extrinsic or intrinsic origin of the deep acceptor in question converge accounting for possible contributions from E2 and E2* in different experimental conditions.},
doi = {10.1063/1.5020134},
journal = {Applied Physics Letters},
number = 4,
volume = 112,
place = {United States},
year = {Wed Jan 24 00:00:00 EST 2018},
month = {Wed Jan 24 00:00:00 EST 2018}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1063/1.5020134

Citation Metrics:
Cited by: 9 works
Citation information provided by
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Works referenced in this record:

Projector augmented-wave method
journal, December 1994


Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
journal, July 1996


Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996