Improved Performance of Zinc Oxide Thin Film Transistor Pressure Sensors and a Demonstration of a Commercial Chip Compatibility with the New Force Sensing Technology
- Integrated Electronics and Biointerfaces Laboratory Department of Electrical and Computer Engineering University of California San Diego La Jolla CA 92093 USA
- Microelectronics Research Center The University of Texas at Austin Department of Electrical and Computer Engineering The University of Texas at Austin 10100 Burnet Road Building 160 Austin TX 78758 USA
- Integrated Electronics and Biointerfaces Laboratory Department of Electrical and Computer Engineering University of California San Diego La Jolla CA 92093 USA, Materials Science and Engineering Program University of California San Diego La Jolla CA 92093 USA, Department of NanoEngineering University of California San Diego La Jolla CA 92093 USA
Abstract A zinc oxide thin film transistor is developed and optimized that simultaneously functions as a transistor and a force sensor, thus allowing for scalable integration of sensors into arrays without the need for additional addressing elements. Through systematic material deposition, microscopy, and piezoelectric characterization, it is determined that an O 2 rich deposition condition improves the transistor performance and pressure sensing characteristics. With these optimizations, a sensitivity of 4 nA kPa −1 and a latency of below 1 ms are achieved, exceeding the criteria for successful commercialization of arrayed pressure sensors. The functionality of 16 × 16 pressure sensor arrays on thin bendable glass substrates for integrated low weight and flexible touchscreen displays is fabricated and demonstrated and read‐out electronics to interface with the arrays and to record their response in real‐time are developed. Finally, the application of these sensors for mobile displays via their operation with an existing commercial touch integrated circuit controller is demonstrated.
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 1417703
- Journal Information:
- Advanced Materials Technologies, Journal Name: Advanced Materials Technologies Vol. 3 Journal Issue: 3; ISSN 2365-709X
- Publisher:
- Wiley Blackwell (John Wiley & Sons)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
Similar Records
Metal oxide semiconductor thin-film transistors for flexible electronics
Substrate-Wide Confined Shear Alignment of Carbon Nanotubes for Thin Film Transistors