Improvement in detection limit for time-of-flight SIMS analysis of dopants in GaN structures

Title: Improvement in detection limit for time-of-flight SIMS analysis of dopants in GaN structures

Journal Article · Tue May 01 00:00:00 EDT 2018 · Journal of Vacuum Science and Technology B

DOI:https://doi.org/10.1116/1.5013001· OSTI ID:1417700

Klump, Andrew ^[1]; Zhou, Chuanzhen; Stevie, Frederick A.; Collazo, Ramón; Sitar, Zlatko

Department of Materials Science and Engineering, North Carolina State University, 1001 Capability Drive, Raleigh, North Carolina 27695

Cite

Export

Save

Journal Information:: Journal of Vacuum Science and Technology B, Journal Name: Journal of Vacuum Science and Technology B Vol. 36 Journal Issue: 3; ISSN 2166-2746

Citation Metrics:

Cited by: 7 works

Citation information provided by
Web of Science

A study on strong memory effects for Mg doping in GaN metalorganic chemical vapor deposition Ohba, Y.; Hatano, A. Journal of Crystal Growth, Vol. 145, Issue 1-4 https://doi.org/10.1016/0022-0248(94)91053-7	journal	December 1994
Reduction of Mg segregation in a metalorganic vapor phase epitaxial grown GaN layer by a low-temperature AlN interlayer Tomita, Kazuyoshi; Itoh, Kenji; Ishiguro, Osamu Journal of Applied Physics, Vol. 104, Issue 1 https://doi.org/10.1063/1.2952051	journal	July 2008
Characterization of nitride-based LED materials and devices using TOF-SIMS Wei, Xuecheng; Zhao, Lixia; Wang, Junxi Surface and Interface Analysis, Vol. 46, Issue S1 https://doi.org/10.1002/sia.5634	journal	August 2014
Suppression of Mg propagation into subsequent layers grown by MOCVD Agarwal, Anchal; Tahhan, Maher; Mates, Tom Journal of Applied Physics, Vol. 121, Issue 2 https://doi.org/10.1063/1.4972031	journal	January 2017
TOF-SIMS Analysis of InGaN/GaN for Expected Doping Profiles Karar, N.; Opila, R.; Beebe, T. ECS Journal of Solid State Science and Technology, Vol. 1, Issue 4 https://doi.org/10.1149/2.008204jss	journal	January 2012
Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition Xing, Huili; Green, Daniel S.; Yu, Haijiang Japanese Journal of Applied Physics, Vol. 42, Issue Part 1, No. 1 https://doi.org/10.1143/JJAP.42.50	journal	January 2003

Analysis of useful ion yield for the Mg dopant in GaN by quadrupole—SIMS

Journal Article · Thu Apr 30 00:00:00 EDT 2020 · Journal of Vacuum Science and Technology B · OSTI ID:1417700

Senevirathna, M. K. Indika; Williams, Michael D.; Cooke, Graham A.; +3 more

Journal Article · Wed May 27 00:00:00 EDT 2020 · Journal of Vacuum Science and Technology B · OSTI ID:1417700

Senevirathna, M. K. Indika; Vernon, Mark; Cooke, Graham A.; +3 more

Journal Article · Mon Feb 24 00:00:00 EST 2020 · Applied Physics Letters · OSTI ID:1417700

Reddy, Pramod; Hayden Breckenridge, M.; Guo, Qiang; +11 more