Layer-by-layer epitaxial growth of defect-engineered strontium cobaltites

Andersen, Tassie K.; Cook, Seyoung; Wan, Gang; Hong, Hawoong; Marks, Laurence D.; Fong, Dillon D.

doi:10.1021/acsami.7b16970

Title: Layer-by-layer epitaxial growth of defect-engineered strontium cobaltites

Journal Article · Thu Jan 18 00:00:00 EST 2018 · ACS Applied Materials and Interfaces

DOI:https://doi.org/10.1021/acsami.7b16970· OSTI ID:1417645

^[1]; Cook, Seyoung ^[1]; Wan, Gang ^[2]; Hong, Hawoong ^[2]; Marks, Laurence D. ^[3]; Fong, Dillon D. ^[2]

Argonne National Lab. (ANL), Argonne, IL (United States); Northwestern Univ., Evanston, IL (United States)
Argonne National Lab. (ANL), Argonne, IL (United States)
Northwestern Univ., Evanston, IL (United States)

Control over structure and composition of (ABO(3)) perovskite oxides offers exciting opportunities since these materials possess unique, tunable properties. Perovskite oxides with cobalt B-site cations are particularly promising, as the range of the cations stable oxidation states leads to many possible structural frameworks. Here, we report growth of strontium cobalt oxide thin films by molecular beam epitaxy, and conditions necessary to stabilize different defect concentration phases. In situ X-ray scattering is used to monitor structural evolution during growth, while in situ X-ray absorption near-edge spectroscopy is used to probe oxidation state and measure changes to oxygen vacancy concentration as a function of film thickness. Experimental results are compared to kinetically limited thermodynamic predictions, in particular, solute trapping, with semiquantitative agreement. Agreement between observations of dependence of cobaltite phase on oxidation activity and deposition rate, and predictions indicates that a combined experimental/theoretical approach is key to understanding phase behavior in the strontium cobalt oxide system.

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Research Organization:: Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 1417645

Alternate ID(s):: OSTI ID: 1425224

Journal Information:: ACS Applied Materials and Interfaces, Vol. 10, Issue 6; ISSN 1944-8244

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 12 works

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36 MATERIALS SCIENCE
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molecular beam epitaxy
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