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Title: Assessing the manufacturing tolerances and uniformity of CMOS compatible metamaterial fabrication

Authors:
 [1];  [1];  [1];  [1];  [1]
  1. Sandia National Laboratories, P.O. Box 5800, Albuquerque, New Mexico 87185
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1417408
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics
Additional Journal Information:
Journal Volume: 36; Journal Issue: 1; Related Information: CHORUS Timestamp: 2018-02-15 01:32:27; Journal ID: ISSN 2166-2746
Publisher:
American Vacuum Society
Country of Publication:
United States
Language:
English

Citation Formats

Musick, Katherine M., Wendt, Joel R., Resnick, Paul J., Sinclair, Michael B., and Burckel, D. Bruce. Assessing the manufacturing tolerances and uniformity of CMOS compatible metamaterial fabrication. United States: N. p., 2018. Web. doi:10.1116/1.5009918.
Musick, Katherine M., Wendt, Joel R., Resnick, Paul J., Sinclair, Michael B., & Burckel, D. Bruce. Assessing the manufacturing tolerances and uniformity of CMOS compatible metamaterial fabrication. United States. doi:10.1116/1.5009918.
Musick, Katherine M., Wendt, Joel R., Resnick, Paul J., Sinclair, Michael B., and Burckel, D. Bruce. 2018. "Assessing the manufacturing tolerances and uniformity of CMOS compatible metamaterial fabrication". United States. doi:10.1116/1.5009918.
@article{osti_1417408,
title = {Assessing the manufacturing tolerances and uniformity of CMOS compatible metamaterial fabrication},
author = {Musick, Katherine M. and Wendt, Joel R. and Resnick, Paul J. and Sinclair, Michael B. and Burckel, D. Bruce},
abstractNote = {},
doi = {10.1116/1.5009918},
journal = {Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics},
number = 1,
volume = 36,
place = {United States},
year = 2018,
month = 1
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1116/1.5009918

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  • A novel micro-hotplate (MHP) gas sensor is designed and fabricated with a standard CMOS technology followed by post-CMOS processes. The tungsten plugging between the first and the second metal layer in the CMOS processes is designed as zigzag resistor heaters embedded in the membrane. In the post-CMOS processes, the membrane is released by front-side bulk silicon etching, and excellent adiabatic performance of the sensor is obtained. Pt/Ti electrode films are prepared on the MHP before the coating of the SnO{sub 2} film, which are promising to present better contact stability compared with Al electrodes. Measurements show that at room temperaturemore » in atmosphere, the device has a low power consumption of ∼19 mW and a rapid thermal response of 8 ms for heating up to 300 °C. The tungsten heater exhibits good high temperature stability with a slight fluctuation (<0.3%) in the resistance at an operation temperature of 300 °C under constant heating mode for 336 h, and a satisfactory temperature coefficient of resistance of about 1.9‰/°C.« less
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  • Abstract not provided.
  • Abstract not provided.