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Title: Nanoplasmonic Phenomena at Electronic Boundaries in Graphene

Abstract

Here, we review recent discoveries of the intriguing plasmonic phenomena at a variety of electronic boundaries (EBs) in graphene including a line of charges in graphene induced by a carbon nanotube gate, grain boundaries in chemical vapor deposited graphene films, an interface between graphene and moiré patterned graphene, an interface between graphene and bilayer graphene, and others. All these and other EBs cause plasmonic impedance mismatch at the two sides of the boundaries. Manifestations of this effect include plasmonic fringes that stem from plasmon reflections and interference. Quantitative analysis and modeling of these plasmonic fringes uncovered intriguing properties and underlying physics of the EBs. Potential plasmonic applications associated with these EBs are also briefly discussed.

Authors:
ORCiD logo [1];  [2];  [2];  [2];  [3]
  1. Ames Lab. and Iowa State Univ., Ames, IA (United States)
  2. Univ. of California, San Diego, La Jolla, CA (United States)
  3. Univ. of California, San Diego, La Jolla, CA (United States); Columbia Univ., New York, NY (United States)
Publication Date:
Research Org.:
Ames Laboratory (AMES), Ames, IA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1417351
Report Number(s):
IS-J-9551
Journal ID: ISSN 2330-4022; TRN: US1801037
Grant/Contract Number:  
ARO-DURIP; GBMF4533; FA9550-15-1-0478; N00014-15-1-2671; AC02-07CH11358
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
ACS Photonics
Additional Journal Information:
Journal Volume: 4; Journal Issue: 12; Journal ID: ISSN 2330-4022
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English
Subject:
70 PLASMA PHYSICS AND FUSION TECHNOLOGY; 36 MATERIALS SCIENCE; electronic boundary; graphene plasmons; plasmonic fringes; s-SNOM; scanning plasmon interferometry

Citation Formats

Fei, Zhe, Ni, Guang -Xin, Jiang, Bor -Yuan, Fogler, Michael M., and Basov, D. N. Nanoplasmonic Phenomena at Electronic Boundaries in Graphene. United States: N. p., 2017. Web. doi:10.1021/acsphotonics.7b00477.
Fei, Zhe, Ni, Guang -Xin, Jiang, Bor -Yuan, Fogler, Michael M., & Basov, D. N. Nanoplasmonic Phenomena at Electronic Boundaries in Graphene. United States. doi:10.1021/acsphotonics.7b00477.
Fei, Zhe, Ni, Guang -Xin, Jiang, Bor -Yuan, Fogler, Michael M., and Basov, D. N. Fri . "Nanoplasmonic Phenomena at Electronic Boundaries in Graphene". United States. doi:10.1021/acsphotonics.7b00477. https://www.osti.gov/servlets/purl/1417351.
@article{osti_1417351,
title = {Nanoplasmonic Phenomena at Electronic Boundaries in Graphene},
author = {Fei, Zhe and Ni, Guang -Xin and Jiang, Bor -Yuan and Fogler, Michael M. and Basov, D. N.},
abstractNote = {Here, we review recent discoveries of the intriguing plasmonic phenomena at a variety of electronic boundaries (EBs) in graphene including a line of charges in graphene induced by a carbon nanotube gate, grain boundaries in chemical vapor deposited graphene films, an interface between graphene and moiré patterned graphene, an interface between graphene and bilayer graphene, and others. All these and other EBs cause plasmonic impedance mismatch at the two sides of the boundaries. Manifestations of this effect include plasmonic fringes that stem from plasmon reflections and interference. Quantitative analysis and modeling of these plasmonic fringes uncovered intriguing properties and underlying physics of the EBs. Potential plasmonic applications associated with these EBs are also briefly discussed.},
doi = {10.1021/acsphotonics.7b00477},
journal = {ACS Photonics},
number = 12,
volume = 4,
place = {United States},
year = {Fri Jun 30 00:00:00 EDT 2017},
month = {Fri Jun 30 00:00:00 EDT 2017}
}

Journal Article:
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Cited by: 4 works
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