skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Atomic layer deposition of molybdenum disulfide films using MoF 6 and H 2 S

Abstract

Molybdenum sulfide films were grown by atomic layer deposition on silicon and fused silica substrates using molybdenum hexafluoride (MoF6) and hydrogen sulfide at 200 degrees C. In situ quartz crystal microbalance (QCM) measurements confirmed linear growth at 0.46 angstrom/cycle and self-limiting chemistry for both precursors. Analysis of the QCM step shapes indicated that MoS2 is the reaction product, and this finding is supported by x-ray photoelectron spectroscopy measurements showing that Mo is predominantly in the Mo(IV) state. However, Raman spectroscopy and x-ray diffraction measurements failed to identify crystalline MoS2 in the as-deposited films, and this might result from unreacted MoFx residues in the films. Annealing the films at 350 degrees C in a hydrogen rich environment yielded crystalline MoS2 and reduced the F concentration in the films. Optical transmission measurements yielded a bandgap of 1.3 eV. Finally, the authors observed that the MoS2 growth per cycle was accelerated when a fraction of the MoF6 pulses were substituted with diethyl zinc. Published by the AVS

Authors:
 [1];  [2];  [1];  [3];  [1];  [1];  [1];  [4];  [5]
  1. Energy Systems Division, Argonne National Laboratory, 9700 S. Cass Ave., Argonne, Illinois 60439
  2. Micron School of Materials Science and Engineering, Boise State University, 1910 University Dr., Boise, Idaho 83725
  3. Department of Chemistry, Northwestern University, 2145 Sheridan Rd., Evanston, Illinois 60208
  4. Micron School of Materials Science and Engineering, Boise State University, 1910 University Dr., Boise Idaho 83725
  5. Energy Systems Division, Argonne National Laboratory, 9700 S. Cass Ave, Argonne, Illinois 60439
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science - Office of Workforce Development for Teachers and Scientists; National Science Foundation (NSF); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1417019
DOE Contract Number:  
AC02-06CH11357
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 36; Journal Issue: 1
Country of Publication:
United States
Language:
English

Citation Formats

Mane, Anil U., Letourneau, Steven, Mandia, David J., Liu, Jian, Libera, Joseph A., Lei, Yu, Peng, Qing, Graugnard, Elton, and Elam, Jeffrey W. Atomic layer deposition of molybdenum disulfide films using MoF 6 and H 2 S. United States: N. p., 2018. Web. doi:10.1116/1.5003423.
Mane, Anil U., Letourneau, Steven, Mandia, David J., Liu, Jian, Libera, Joseph A., Lei, Yu, Peng, Qing, Graugnard, Elton, & Elam, Jeffrey W. Atomic layer deposition of molybdenum disulfide films using MoF 6 and H 2 S. United States. doi:10.1116/1.5003423.
Mane, Anil U., Letourneau, Steven, Mandia, David J., Liu, Jian, Libera, Joseph A., Lei, Yu, Peng, Qing, Graugnard, Elton, and Elam, Jeffrey W. Mon . "Atomic layer deposition of molybdenum disulfide films using MoF 6 and H 2 S". United States. doi:10.1116/1.5003423.
@article{osti_1417019,
title = {Atomic layer deposition of molybdenum disulfide films using MoF 6 and H 2 S},
author = {Mane, Anil U. and Letourneau, Steven and Mandia, David J. and Liu, Jian and Libera, Joseph A. and Lei, Yu and Peng, Qing and Graugnard, Elton and Elam, Jeffrey W.},
abstractNote = {Molybdenum sulfide films were grown by atomic layer deposition on silicon and fused silica substrates using molybdenum hexafluoride (MoF6) and hydrogen sulfide at 200 degrees C. In situ quartz crystal microbalance (QCM) measurements confirmed linear growth at 0.46 angstrom/cycle and self-limiting chemistry for both precursors. Analysis of the QCM step shapes indicated that MoS2 is the reaction product, and this finding is supported by x-ray photoelectron spectroscopy measurements showing that Mo is predominantly in the Mo(IV) state. However, Raman spectroscopy and x-ray diffraction measurements failed to identify crystalline MoS2 in the as-deposited films, and this might result from unreacted MoFx residues in the films. Annealing the films at 350 degrees C in a hydrogen rich environment yielded crystalline MoS2 and reduced the F concentration in the films. Optical transmission measurements yielded a bandgap of 1.3 eV. Finally, the authors observed that the MoS2 growth per cycle was accelerated when a fraction of the MoF6 pulses were substituted with diethyl zinc. Published by the AVS},
doi = {10.1116/1.5003423},
journal = {Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films},
number = 1,
volume = 36,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2018},
month = {Mon Jan 01 00:00:00 EST 2018}
}