Deconvoluting the Photonic and Electronic Response of 2D Materials: The Case of MoS2

Zhang, Kehao; Borys, Nicholas J.; Bersch, Brian M.; Bhimanapati, Ganesh R.; Xu, Ke; Wang, Baoming; Wang, Ke; Labella, Michael; Williams, Teague A.; Haque, Md Amanul.; Barnard, Edward S.; Fullerton-Shirey, Susan; Schuck, P. James; Robinson, Joshua A.

doi:10.1038/s41598-017-16970-6

Title: Deconvoluting the Photonic and Electronic Response of 2D Materials: The Case of MoS₂

Journal Article · Tue Dec 05 00:00:00 EST 2017 · Scientific Reports

DOI:https://doi.org/10.1038/s41598-017-16970-6· OSTI ID:1416942

Zhang, Kehao ^[1]; Borys, Nicholas J. ^[2]; Bersch, Brian M. ^[1]; Bhimanapati, Ganesh R. ^[1]; Xu, Ke ^[3]; Wang, Baoming ^[1]; Wang, Ke ^[1]; Labella, Michael ^[1]; Williams, Teague A. ^[1]; Haque, Md Amanul. ^[1]; Barnard, Edward S. ^[2]; Fullerton-Shirey, Susan ^[3]; Schuck, P. James ^[2]; Robinson, Joshua A. ^[1]

Pennsylvania State Univ., University Park, PA (United States)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Univ. of Pittsburgh, PA (United States)

Evaluating and tuning the properties of two-dimensional (2D) materials is a major focus of advancing 2D science and technology. While many claim that the photonic properties of a 2D layer provide evidence that the material is "high quality", this may not be true for electronic performance. In this work, we deconvolute the photonic and electronic response of synthetic monolayer molybdenum disulfide. We demonstrate that enhanced photoluminescence can be robustly engineered via the proper choice of substrate, where growth of MoS₂ on r-plane sapphire can yield > 100x enhancement in PL and carrier lifetime due to increased molybdenum-oxygen bonding compared to that of traditionally grown MoS₂ on c-plane sapphire. These dramatic enhancements in optical properties are similar to those of super-acid treated MoS₂ , and suggest that the electronic properties of the MoS₂ are also superior. However, a direct comparison of the charge transport properties indicates that the enhanced PL due to increased Mo-O bonding leads to p-type compensation doping, and is accompanied by a 2x degradation in transport properties compared to MoS₂ grown on c-plane sapphire. This work provides a foundation for understanding the link between photonic and electronic performance of 2D semiconducting layers, and demonstrates that they are not always correlated.

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1416942

Journal Information:: Scientific Reports, Vol. 7, Issue 1; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 15 works

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