skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Physical origins of current and temperature controlled negative differential resistances in NbO 2

Abstract

Negative differential resistance behavior in oxide memristors, especially those using NbO 2, is gaining renewed interest because of its potential utility in neuromorphic computing. However, there has been a decade-long controversy over whether the negative differential resistance is caused by a relatively low-temperature non-linear transport mechanism or a high-temperature Mott transition. Resolving this issue will enable consistent and robust predictive modeling of this phenomenon for different applications. Here in this paper, we examine NbO 2 memristors that exhibit both a current-controlled and a temperature-controlled negative differential resistance. Through thermal and chemical spectromicroscopy and numerical simulations, we confirm that the former is caused by a ~400 K non-linear-transport-driven instability and the latter is caused by the ~1000 K Mott metal-insulator transition, for which the thermal conductance counter-intuitively decreases in the metallic state relative to the insulating state.

Authors:
 [1];  [2];  [1];  [1];  [1];  [1];  [1];  [3]; ORCiD logo [3];  [3];  [1]
  1. Hewlett Packard Labs, Palo Alto, CA (United States)
  2. Stanford Univ., CA (United States)
  3. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC); National Science Foundation (NSF)
OSTI Identifier:
1416938
Grant/Contract Number:
AC02-05CH11231; 2017-17013000002; ECS-9731293
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Nature Communications
Additional Journal Information:
Journal Volume: 8; Journal Issue: 1; Journal ID: ISSN 2041-1723
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
97 MATHEMATICS AND COMPUTING; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Citation Formats

Kumar, Suhas, Wang, Ziwen, Davila, Noraica, Kumari, Niru, Norris, Kate J., Huang, Xiaopeng, Strachan, John Paul, Vine, David, Kilcoyne, A. L. David, Nishi, Yoshio, and Williams, R. Stanley. Physical origins of current and temperature controlled negative differential resistances in NbO2. United States: N. p., 2017. Web. doi:10.1038/s41467-017-00773-4.
Kumar, Suhas, Wang, Ziwen, Davila, Noraica, Kumari, Niru, Norris, Kate J., Huang, Xiaopeng, Strachan, John Paul, Vine, David, Kilcoyne, A. L. David, Nishi, Yoshio, & Williams, R. Stanley. Physical origins of current and temperature controlled negative differential resistances in NbO2. United States. doi:10.1038/s41467-017-00773-4.
Kumar, Suhas, Wang, Ziwen, Davila, Noraica, Kumari, Niru, Norris, Kate J., Huang, Xiaopeng, Strachan, John Paul, Vine, David, Kilcoyne, A. L. David, Nishi, Yoshio, and Williams, R. Stanley. 2017. "Physical origins of current and temperature controlled negative differential resistances in NbO2". United States. doi:10.1038/s41467-017-00773-4. https://www.osti.gov/servlets/purl/1416938.
@article{osti_1416938,
title = {Physical origins of current and temperature controlled negative differential resistances in NbO2},
author = {Kumar, Suhas and Wang, Ziwen and Davila, Noraica and Kumari, Niru and Norris, Kate J. and Huang, Xiaopeng and Strachan, John Paul and Vine, David and Kilcoyne, A. L. David and Nishi, Yoshio and Williams, R. Stanley},
abstractNote = {Negative differential resistance behavior in oxide memristors, especially those using NbO2, is gaining renewed interest because of its potential utility in neuromorphic computing. However, there has been a decade-long controversy over whether the negative differential resistance is caused by a relatively low-temperature non-linear transport mechanism or a high-temperature Mott transition. Resolving this issue will enable consistent and robust predictive modeling of this phenomenon for different applications. Here in this paper, we examine NbO2 memristors that exhibit both a current-controlled and a temperature-controlled negative differential resistance. Through thermal and chemical spectromicroscopy and numerical simulations, we confirm that the former is caused by a ~400 K non-linear-transport-driven instability and the latter is caused by the ~1000 K Mott metal-insulator transition, for which the thermal conductance counter-intuitively decreases in the metallic state relative to the insulating state.},
doi = {10.1038/s41467-017-00773-4},
journal = {Nature Communications},
number = 1,
volume = 8,
place = {United States},
year = 2017,
month = 9
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Save / Share:
  • Ab initio calculations are performed to investigate the spin-polarized transport properties of the bare and hydrogenated zigzag silicene nanoribbons (ZSiNRs). The results show that the ZSiNRs with symmetric (asymmetric) edges prefer the ferromagnetic (antiferromagnetic) as their ground states with the semiconductor properties, while the accordingly antiferromagnetic (ferromagnetic) states exhibit the metallic behaviors. These facts result in a giant magnetoresistance behavior between the ferromagnetic and antiferromagnetic states in the low bias-voltage regime. Moreover, in the ferromagnetic ZSiNRs with asymmetric edges, a perfect spin-filtering effect with 100% positive electric current polarization can be achieved by altering the bias voltage. In addition, wemore » also find that the negative differential resistances prefer the metastable states. The findings here indicate that the asymmetric and symmetric ZSiNRs are promising materials for spintronic applications.« less
  • The temperature control system of the large-size plasma grid has been developed to realize the long pulse production of high-current negative ions for JT-60SA. By using this prototype system for the JT-60SA ion source, 15 A negative ions has been sustained for 100 s for the first time, which is three times longer than that obtained in JT-60U. In this system, a high-temperature fluorinated fluid with a high boiling point of 270 degree Celsius is circulated in the cooling channels of the plasma grids (PG) where a cesium (Cs) coverage is formed to enhance the negative ion production. Because themore » PG temperature control had been applied to only 10% of the extraction area previously, the prototype PG with the full extraction area (110 cm × 45 cm) was developed to increase the negative ion current in this time. In the preliminary results of long pulse productions of high-current negative ions at a Cs conditioning phase, the negative ion production was gradually degraded in the last half of 100 s pulse where the temperature of an arc chamber wall was not saturated. From the spectroscopic measurements, it was found that the Cs flux released from the wall might affect to the negative ion production, which implied the wall temperature should be kept low to control the Cs flux to the PG for the long-pulse high-current production. The obtained results of long-pulse production and the PG temperature control method contributes the design of the ITER ion source.« less
  • The use of attaching gases in an externally sustained diffuse discharge opening switch with a low attachment rate at low values of E-italic/N-italic and a high attachment rate at high values of E-italic/N-italic allows the discharge to operate with low losses in the closed switch phase and to achieve fast opening after the sustainment source is turned off. Such an attacher generates a J-italic-E-italic/N-italic characteristic with a negative differential conductivity in an intermediate E-italic/N-italic range. Such a characteristic obstructs the closing process of the discharge if it is operated in a high impedance system. Experiments demonstrating these effects are presentedmore » for electron beam sustained discharges in mixtures of argon and C/sub 2/F/sub 6/.« less
  • Thermal conduction of the Frenkel-Kontorova (FK) lattices with interfacial coupling is investigated numerically. The results indicate that: (i) For appropriate lattice periods, as the system is symmetric, a bidirectional negative differential thermal resistance (NDTR) phenomenon will appear. If the system is asymmetric, the bidirectional NDTR is gradually converted into an unidirectional NDTR. (ii) The bidirectional NDTR phenomenon effect also depends on the period of the FK lattice as the other parameters remains unchanged. With the increment of the lattice period, the bidirectional NDTR will gradually disappear. (iii) From a stochastic dynamics point of view, thermal transport properties of the systemmore » are determined by the competition between the two types of thermal conduction: one comes from the collusion between atoms, the other is due to the elastic coupling between atoms. For the smaller lattice periods, the former type of thermal conduction occupies the dominating position and the NDTR effect will appear.« less
  • We have investigated transport in a cross-shaped two-dimensional electron gas with superconducting electrodes coupled to two opposite arms. Multiterminal resistances, measured as a function of the superconducting phase difference and the magnetic flux, are analyzed in terms of an extended Landauer-B{umlt u}ttiker transport formalism. We show that extended reciprocity relations hold. Correlations between transport coefficients are obtained from, e.g., (negative) three-terminal and nonlocal resistances. Energy spectroscopy reveals a reentrant behavior of the transport coefficients around the Thouless energy. {copyright} {ital 1996 The American Physical Society.}