Gapped electronic structure of epitaxial stanene on InSb(111)

Xu, Cai-Zhi; Chan, Yang-Hao; Chen, Peng; Wang, Xiaoxiong; Flötotto, David; Hlevyack, Joseph Andrew; Bian, Guang; Mo, Sung-Kwan; Chou, Mei-Yin; Chiang, Tai-Chang

doi:10.1103/PhysRevB.97.035122

Title: Gapped electronic structure of epitaxial stanene on InSb(111)

Journal Article · Thu Jan 11 00:00:00 EST 2018 · Physical Review B

DOI:https://doi.org/10.1103/PhysRevB.97.035122· OSTI ID:1571094

Xu, Cai-Zhi ^[1]; Chan, Yang-Hao ^[2]; Chen, Peng ^[1]; Wang, Xiaoxiong ^[3]; Flötotto, David ^[4]; Hlevyack, Joseph Andrew ^[4]; Bian, Guang ^[5]; Mo, Sung-Kwan ^[6]; Chou, Mei-Yin ^[7]; Chiang, Tai-Chang

Univ. of Illinois at Urbana-Champaign, IL (United States). Dept. of Physics; Univ. of Illinois at Urbana-Champaign, IL (United States). Frederick Seitz Materials Research Lab.; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
Academia Sinica, Taipei (Taiwan). Inst. of Atomic and Molecular Sciences
Univ. of Illinois at Urbana-Champaign, IL (United States). Dept. of Physics; Univ. of Illinois at Urbana-Champaign, IL (United States). Frederick Seitz Materials Research Lab.; Nanjing Univ. of Science and Technology, Nanjing (China). College of Science
Univ. of Illinois at Urbana-Champaign, IL (United States). Dept. of Physics; Univ. of Illinois at Urbana-Champaign, IL (United States). Frederick Seitz Materials Research Lab.
Univ. of Missouri, Columbia, MO (United States). Dept. of Physics and Astronomy
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
Academia Sinica, Taipei (Taiwan). Inst. of Atomic and Molecular Sciences; Georgia Inst. of Technology, Atlanta, GA (United States). School of Physics

We report that stanene (single-layer gray tin), with an electronic structure akin to that of graphene but exhibiting a much larger spin-orbit gap, offers a promising platform for room-temperature electronics based on the quantum spin Hall (QSH) effect. This material has received much theoretical attention, but a suitable substrate for stanene growth that results in an overall gapped electronic structure has been elusive; a sizable gap is necessary for room-temperature applications. Here, we report a study of stanene, epitaxially grown on the (111)B-face of indium antimonide (InSb). Angle-resolved photoemission spectroscopy measurements reveal a gap of 0.44 eV, in agreement with our first-principles calculations. Lastly, the results indicate that stanene on InSb(111) is a strong contender for electronic QSH applications.

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States); Univerisity of Illinois at Urbana-Champaign, Urbana, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division

Grant/Contract Number:: AC02-05CH11231; FG02-07ER46383

OSTI ID:: 1571094

Alternate ID(s):: OSTI ID: 1416628; OSTI ID: 1416710

Journal Information:: Physical Review B, Vol. 97, Issue 3; ISSN 2469-9950

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 83 works

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