skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Effects of in-situ UV irradiation on the uniformity and optical properties of GaAsBi epi-layers grown by MBE

Abstract

In-situ UV illumination influences the incorporation dynamics of bismuth adatom in GaAs. Here we use the inherent variation of the fluence across the sample to explore the role of the incident irradiation. With illumination it is found that steady state growth processes are achieved more quickly resulting in more abrupt interfaces, as well as uniform GaAs 1-xBi x epi-layers. Comparisons of low temperature photoluminescence spectra show an increasing density of clusters of incorporated bismuth atoms with decreasing incident fluence.

Authors:
 [1];  [1];  [1];  [1]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1416525
Report Number(s):
NREL/JA-5K00-70754
Journal ID: ISSN 0022-0248
Grant/Contract Number:  
AC36-08GO28308
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Journal of Crystal Growth
Additional Journal Information:
Journal Volume: 484; Journal Issue: C; Journal ID: ISSN 0022-0248
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; molecular beam epitaxy; impurities; bismuth compounds; semiconducting III-V materials

Citation Formats

Beaton, Daniel A., Steger, M., Christian, T., and Mascarenhas, A. Effects of in-situ UV irradiation on the uniformity and optical properties of GaAsBi epi-layers grown by MBE. United States: N. p., 2017. Web. doi:10.1016/j.jcrysgro.2017.12.026.
Beaton, Daniel A., Steger, M., Christian, T., & Mascarenhas, A. Effects of in-situ UV irradiation on the uniformity and optical properties of GaAsBi epi-layers grown by MBE. United States. doi:10.1016/j.jcrysgro.2017.12.026.
Beaton, Daniel A., Steger, M., Christian, T., and Mascarenhas, A. Thu . "Effects of in-situ UV irradiation on the uniformity and optical properties of GaAsBi epi-layers grown by MBE". United States. doi:10.1016/j.jcrysgro.2017.12.026.
@article{osti_1416525,
title = {Effects of in-situ UV irradiation on the uniformity and optical properties of GaAsBi epi-layers grown by MBE},
author = {Beaton, Daniel A. and Steger, M. and Christian, T. and Mascarenhas, A.},
abstractNote = {In-situ UV illumination influences the incorporation dynamics of bismuth adatom in GaAs. Here we use the inherent variation of the fluence across the sample to explore the role of the incident irradiation. With illumination it is found that steady state growth processes are achieved more quickly resulting in more abrupt interfaces, as well as uniform GaAs1-xBix epi-layers. Comparisons of low temperature photoluminescence spectra show an increasing density of clusters of incorporated bismuth atoms with decreasing incident fluence.},
doi = {10.1016/j.jcrysgro.2017.12.026},
journal = {Journal of Crystal Growth},
number = C,
volume = 484,
place = {United States},
year = {Thu Dec 14 00:00:00 EST 2017},
month = {Thu Dec 14 00:00:00 EST 2017}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on December 14, 2018
Publisher's Version of Record

Save / Share: