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Title: Mechanism of Na accumulation at extended defects in Si from first-principles

Authors:
 [1];  [1]
  1. Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1416457
Grant/Contract Number:
AC02-06CH11357
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 123; Journal Issue: 16; Related Information: CHORUS Timestamp: 2018-01-10 11:51:50; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Park, Ji-Sang, and Chan, Maria K. Y. Mechanism of Na accumulation at extended defects in Si from first-principles. United States: N. p., 2018. Web. doi:10.1063/1.5003385.
Park, Ji-Sang, & Chan, Maria K. Y. Mechanism of Na accumulation at extended defects in Si from first-principles. United States. doi:10.1063/1.5003385.
Park, Ji-Sang, and Chan, Maria K. Y. Sat . "Mechanism of Na accumulation at extended defects in Si from first-principles". United States. doi:10.1063/1.5003385.
@article{osti_1416457,
title = {Mechanism of Na accumulation at extended defects in Si from first-principles},
author = {Park, Ji-Sang and Chan, Maria K. Y.},
abstractNote = {},
doi = {10.1063/1.5003385},
journal = {Journal of Applied Physics},
number = 16,
volume = 123,
place = {United States},
year = {Sat Apr 28 00:00:00 EDT 2018},
month = {Sat Apr 28 00:00:00 EDT 2018}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on January 10, 2019
Publisher's Accepted Manuscript

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