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Title: Surface buckling of black phosphorus: Determination, origin, and influence on electronic structure

Authors:
; ; ; ; ; ; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1416443
Grant/Contract Number:
SC0012704; FG 02-04-ER-46157; SC0016424
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Physical Review Materials
Additional Journal Information:
Journal Volume: 1; Journal Issue: 7; Related Information: CHORUS Timestamp: 2018-01-10 11:19:46; Journal ID: ISSN 2475-9953
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Dai, Zhongwei, Jin, Wencan, Yu, Jie-Xiang, Grady, Maxwell, Sadowski, Jerzy T., Kim, Young Duck, Hone, James, Dadap, Jerry I., Zang, Jiadong, Osgood, Richard M., and Pohl, Karsten. Surface buckling of black phosphorus: Determination, origin, and influence on electronic structure. United States: N. p., 2017. Web. doi:10.1103/PhysRevMaterials.1.074003.
Dai, Zhongwei, Jin, Wencan, Yu, Jie-Xiang, Grady, Maxwell, Sadowski, Jerzy T., Kim, Young Duck, Hone, James, Dadap, Jerry I., Zang, Jiadong, Osgood, Richard M., & Pohl, Karsten. Surface buckling of black phosphorus: Determination, origin, and influence on electronic structure. United States. doi:10.1103/PhysRevMaterials.1.074003.
Dai, Zhongwei, Jin, Wencan, Yu, Jie-Xiang, Grady, Maxwell, Sadowski, Jerzy T., Kim, Young Duck, Hone, James, Dadap, Jerry I., Zang, Jiadong, Osgood, Richard M., and Pohl, Karsten. 2017. "Surface buckling of black phosphorus: Determination, origin, and influence on electronic structure". United States. doi:10.1103/PhysRevMaterials.1.074003.
@article{osti_1416443,
title = {Surface buckling of black phosphorus: Determination, origin, and influence on electronic structure},
author = {Dai, Zhongwei and Jin, Wencan and Yu, Jie-Xiang and Grady, Maxwell and Sadowski, Jerzy T. and Kim, Young Duck and Hone, James and Dadap, Jerry I. and Zang, Jiadong and Osgood, Richard M. and Pohl, Karsten},
abstractNote = {},
doi = {10.1103/PhysRevMaterials.1.074003},
journal = {Physical Review Materials},
number = 7,
volume = 1,
place = {United States},
year = 2017,
month =
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on December 29, 2018
Publisher's Accepted Manuscript

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  • Cited by 32
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  • Black phosphorus, a layered two-dimensional crystal with tunable electronic properties and high hole mobility, is quickly emerging as a promising candidate for future electronic and photonic devices. Although theoretical studies using ab initio calculations have tried to predict its atomic and electronic structure, uncertainty in its fundamental properties due to a lack of clear experimental evidence continues to stymie our full understanding and application of this novel material. In this work, aberration-corrected scanning transmission electron microscopy and ab initio calculations are used to study the crystal structure of few-layer black phosphorus. Directly interpretable annular dark-field images provide a three-dimensional atomic-resolutionmore » view of this layered material in which its stacking order and all three lattice parameters can be unambiguously identified. In addition, electron energy-loss spectroscopy (EELS) is used to measure the conduction band density of states of black phosphorus, which agrees well with the results of density functional theory calculations performed for the experimentally determined crystal. Furthermore, experimental EELS measurements of interband transitions and surface plasmon excitations are also consistent with simulated results. Finally, the effects of oxidation on both the atomic and electronic structure of black phosphorus are analyzed to explain observed device degradation. The transformation of black phosphorus into amorphous PO{sub 3} or H{sub 3}PO{sub 3} during oxidation may ultimately be responsible for the degradation of devices exposed to atmosphere over time.« less
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