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Title: Deformable Organic Nanowire Field-Effect Transistors

Authors:
 [1];  [2];  [3];  [4];  [5];  [2];  [2];  [2];  [2];  [2];  [2];  [2];  [6];  [6];  [6];  [3];  [3];  [2]; ORCiD logo [7];  [2]
  1. Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang Gyeongbuk 37673 Republic of Korea, Department of Chemical Engineering, Stanford University, Stanford CA 94305 USA
  2. Department of Chemical Engineering, Stanford University, Stanford CA 94305 USA
  3. Department of Materials Science and Engineering, Stanford University, Stanford CA 94305 USA
  4. Department of Chemical Engineering, Stanford University, Stanford CA 94305 USA, Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park CA 94025 USA
  5. Department of Electrical Engineering, Stanford University, Stanford CA 94305 USA
  6. Corning Incorporated, Corning NY 14831 USA
  7. Department of Materials Science and Engineering, Research Institute of Advanced Materials, BK21 PLUS SNU Materials Division for Educating Creative Global Leaders, Seoul National University, Seoul 08826 Republic of Korea
Publication Date:
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1416392
Grant/Contract Number:  
FOA-0000654-1588; AC02-76SF00515
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Advanced Materials
Additional Journal Information:
Journal Name: Advanced Materials Journal Volume: 30 Journal Issue: 7; Journal ID: ISSN 0935-9648
Publisher:
Wiley Blackwell (John Wiley & Sons)
Country of Publication:
Germany
Language:
English

Citation Formats

Lee, Yeongjun, Oh, Jin Young, Kim, Taeho Roy, Gu, Xiaodan, Kim, Yeongin, Wang, Ging-Ji Nathan, Wu, Hung-Chin, Pfattner, Raphael, To, John W. F., Katsumata, Toru, Son, Donghee, Kang, Jiheong, Matthews, James R., Niu, Weijun, He, Mingqian, Sinclair, Robert, Cui, Yi, Tok, Jeffery B. -H., Lee, Tae-Woo, and Bao, Zhenan. Deformable Organic Nanowire Field-Effect Transistors. Germany: N. p., 2018. Web. doi:10.1002/adma.201704401.
Lee, Yeongjun, Oh, Jin Young, Kim, Taeho Roy, Gu, Xiaodan, Kim, Yeongin, Wang, Ging-Ji Nathan, Wu, Hung-Chin, Pfattner, Raphael, To, John W. F., Katsumata, Toru, Son, Donghee, Kang, Jiheong, Matthews, James R., Niu, Weijun, He, Mingqian, Sinclair, Robert, Cui, Yi, Tok, Jeffery B. -H., Lee, Tae-Woo, & Bao, Zhenan. Deformable Organic Nanowire Field-Effect Transistors. Germany. doi:10.1002/adma.201704401.
Lee, Yeongjun, Oh, Jin Young, Kim, Taeho Roy, Gu, Xiaodan, Kim, Yeongin, Wang, Ging-Ji Nathan, Wu, Hung-Chin, Pfattner, Raphael, To, John W. F., Katsumata, Toru, Son, Donghee, Kang, Jiheong, Matthews, James R., Niu, Weijun, He, Mingqian, Sinclair, Robert, Cui, Yi, Tok, Jeffery B. -H., Lee, Tae-Woo, and Bao, Zhenan. Mon . "Deformable Organic Nanowire Field-Effect Transistors". Germany. doi:10.1002/adma.201704401.
@article{osti_1416392,
title = {Deformable Organic Nanowire Field-Effect Transistors},
author = {Lee, Yeongjun and Oh, Jin Young and Kim, Taeho Roy and Gu, Xiaodan and Kim, Yeongin and Wang, Ging-Ji Nathan and Wu, Hung-Chin and Pfattner, Raphael and To, John W. F. and Katsumata, Toru and Son, Donghee and Kang, Jiheong and Matthews, James R. and Niu, Weijun and He, Mingqian and Sinclair, Robert and Cui, Yi and Tok, Jeffery B. -H. and Lee, Tae-Woo and Bao, Zhenan},
abstractNote = {},
doi = {10.1002/adma.201704401},
journal = {Advanced Materials},
number = 7,
volume = 30,
place = {Germany},
year = {Mon Jan 08 00:00:00 EST 2018},
month = {Mon Jan 08 00:00:00 EST 2018}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on January 8, 2019
Publisher's Accepted Manuscript

Citation Metrics:
Cited by: 3 works
Citation information provided by
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Works referenced in this record:

Materials and Mechanics for Stretchable Electronics
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A Stretchable Form of Single-Crystal Silicon for High-Performance Electronics on Rubber Substrates
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A buckling-based metrology for measuring the elastic moduli of polymeric thin films
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