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Title: Progress in doping semiconductor nanowires during growth

Authors:
; ; ;
Publication Date:
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1416026
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Materials Science in Semiconductor Processing
Additional Journal Information:
Journal Volume: 62; Journal Issue: C; Related Information: CHORUS Timestamp: 2018-01-05 20:48:10; Journal ID: ISSN 1369-8001
Publisher:
Elsevier
Country of Publication:
Netherlands
Language:
English

Citation Formats

Dayeh, Shadi A., Chen, Renjie, Ro, Yun Goo, and Sim, Joonseop. Progress in doping semiconductor nanowires during growth. Netherlands: N. p., 2017. Web. doi:10.1016/j.mssp.2016.10.016.
Dayeh, Shadi A., Chen, Renjie, Ro, Yun Goo, & Sim, Joonseop. Progress in doping semiconductor nanowires during growth. Netherlands. doi:10.1016/j.mssp.2016.10.016.
Dayeh, Shadi A., Chen, Renjie, Ro, Yun Goo, and Sim, Joonseop. Mon . "Progress in doping semiconductor nanowires during growth". Netherlands. doi:10.1016/j.mssp.2016.10.016.
@article{osti_1416026,
title = {Progress in doping semiconductor nanowires during growth},
author = {Dayeh, Shadi A. and Chen, Renjie and Ro, Yun Goo and Sim, Joonseop},
abstractNote = {},
doi = {10.1016/j.mssp.2016.10.016},
journal = {Materials Science in Semiconductor Processing},
number = C,
volume = 62,
place = {Netherlands},
year = {Mon May 01 00:00:00 EDT 2017},
month = {Mon May 01 00:00:00 EDT 2017}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1016/j.mssp.2016.10.016

Citation Metrics:
Cited by: 2 works
Citation information provided by
Web of Science

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