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Title: Epitaxial growth of high quality SrFeO 3 films on (001) oriented (LaAlO 3 ) 0.3 (Sr 2 TaAlO 6 ) 0.7

Abstract

Growth of strontium ferrite SrFeO3 films with stoichiometry of (1:1:3) is challenging as the unstable Fe4+ oxidation state favors the formation of O vacancies. Here, we report layer by layer growth of SrFeO3 on (001) oriented (LaAlO3)0.3(Sr2TaAlO6)0.7 using ozone assisted molecular beam epitaxy. Upon cooling from room temperature, the film’s resistivity decreased from 750 Ω ∙ to 150 Ω ∙ , as low as the best single crystals, with two identifiable transition points near 110 K and 60 K in resistivity measurements, being hysteretic between cooling and warming through the 60 K transition. During various annealing steps, the low temperature resistivity changes by orders of magnitude, accompanied by an increase in the c-axis lattice parameter. The hysteresis near 60 K persists for a wide range of annealing conditions. We have identified conditions under which changes due to annealing can be reversed. We attribute changes in resistivity and out of plane lattice parameter to the reversible movement of oxygen ions in the lattice. SrFeO3 may be a promising material for resistive memory applications based upon the control of oxygen vacancies.

Authors:
 [1];  [1];  [1]; ORCiD logo [1]
  1. Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science - Office of Basic Energy Sciences - Materials Sciences and Engineering Division
OSTI Identifier:
1415602
DOE Contract Number:
AC02-06CH11357
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 111; Journal Issue: 23
Country of Publication:
United States
Language:
English

Citation Formats

Hong, Deshun, Liu, Changjiang, Pearson, John, and Bhattacharya, Anand. Epitaxial growth of high quality SrFeO 3 films on (001) oriented (LaAlO 3 ) 0.3 (Sr 2 TaAlO 6 ) 0.7. United States: N. p., 2017. Web. doi:10.1063/1.5002672.
Hong, Deshun, Liu, Changjiang, Pearson, John, & Bhattacharya, Anand. Epitaxial growth of high quality SrFeO 3 films on (001) oriented (LaAlO 3 ) 0.3 (Sr 2 TaAlO 6 ) 0.7. United States. doi:10.1063/1.5002672.
Hong, Deshun, Liu, Changjiang, Pearson, John, and Bhattacharya, Anand. Mon . "Epitaxial growth of high quality SrFeO 3 films on (001) oriented (LaAlO 3 ) 0.3 (Sr 2 TaAlO 6 ) 0.7". United States. doi:10.1063/1.5002672.
@article{osti_1415602,
title = {Epitaxial growth of high quality SrFeO 3 films on (001) oriented (LaAlO 3 ) 0.3 (Sr 2 TaAlO 6 ) 0.7},
author = {Hong, Deshun and Liu, Changjiang and Pearson, John and Bhattacharya, Anand},
abstractNote = {Growth of strontium ferrite SrFeO3 films with stoichiometry of (1:1:3) is challenging as the unstable Fe4+ oxidation state favors the formation of O vacancies. Here, we report layer by layer growth of SrFeO3 on (001) oriented (LaAlO3)0.3(Sr2TaAlO6)0.7 using ozone assisted molecular beam epitaxy. Upon cooling from room temperature, the film’s resistivity decreased from 750 Ω ∙ to 150 Ω ∙ , as low as the best single crystals, with two identifiable transition points near 110 K and 60 K in resistivity measurements, being hysteretic between cooling and warming through the 60 K transition. During various annealing steps, the low temperature resistivity changes by orders of magnitude, accompanied by an increase in the c-axis lattice parameter. The hysteresis near 60 K persists for a wide range of annealing conditions. We have identified conditions under which changes due to annealing can be reversed. We attribute changes in resistivity and out of plane lattice parameter to the reversible movement of oxygen ions in the lattice. SrFeO3 may be a promising material for resistive memory applications based upon the control of oxygen vacancies.},
doi = {10.1063/1.5002672},
journal = {Applied Physics Letters},
number = 23,
volume = 111,
place = {United States},
year = {Mon Dec 04 00:00:00 EST 2017},
month = {Mon Dec 04 00:00:00 EST 2017}
}