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Title: Methods for producing thin film charge selective transport layers

Abstract

Methods for producing thin film charge selective transport layers are provided. In one embodiment, a method for forming a thin film charge selective transport layer comprises: providing a precursor solution comprising a metal containing reactive precursor material dissolved into a complexing solvent; depositing the precursor solution onto a surface of a substrate to form a film; and forming a charge selective transport layer on the substrate by annealing the film.

Inventors:
; ;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1415438
Patent Number(s):
9,859,515
Application Number:
14/200,315
Assignee:
Alliance for Sustainable Energy, LLC (Golden, CO); SolarWindow Technologies, Inc. (Columbia, MD) NREL
DOE Contract Number:
AC36-08GO28308
Resource Type:
Patent
Resource Relation:
Patent File Date: 2014 Mar 07
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Hammond, Scott Ryan, Olson, Dana C., and van Hest, Marinus Franciscus Antonius Maria. Methods for producing thin film charge selective transport layers. United States: N. p., 2018. Web.
Hammond, Scott Ryan, Olson, Dana C., & van Hest, Marinus Franciscus Antonius Maria. Methods for producing thin film charge selective transport layers. United States.
Hammond, Scott Ryan, Olson, Dana C., and van Hest, Marinus Franciscus Antonius Maria. Tue . "Methods for producing thin film charge selective transport layers". United States. doi:. https://www.osti.gov/servlets/purl/1415438.
@article{osti_1415438,
title = {Methods for producing thin film charge selective transport layers},
author = {Hammond, Scott Ryan and Olson, Dana C. and van Hest, Marinus Franciscus Antonius Maria},
abstractNote = {Methods for producing thin film charge selective transport layers are provided. In one embodiment, a method for forming a thin film charge selective transport layer comprises: providing a precursor solution comprising a metal containing reactive precursor material dissolved into a complexing solvent; depositing the precursor solution onto a surface of a substrate to form a film; and forming a charge selective transport layer on the substrate by annealing the film.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jan 02 00:00:00 EST 2018},
month = {Tue Jan 02 00:00:00 EST 2018}
}

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