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Title: Localization behavior at bound Bi complex states in GaA s 1 - x B i x

Abstract

While bismuth-related states are known to localize carriers in GaAs 1-xBi x alloys, the localization behavior of distinct Bi pair, triplet and cluster states bound above the valence band is less well understood. We probe localization at three different Bi complex states in dilute GaAs 1-xBi x alloys using magneto-photoluminescence and time-resolved photoluminescence spectroscopy. The mass of electrons Coulomb-bound to holes trapped at Bi pair states is found to increase relative to the average electron mass in the alloy. This increase is attributed to enhanced local compressive strain in the immediate vicinity of the pairs. The dependence of energy transfer between these states on composition is also explored.

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States); Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1415386
Alternate Identifier(s):
OSTI ID: 1372728; OSTI ID: 1415125
Report Number(s):
NREL/JA-5K00-68789; LA-UR-17-24317
Journal ID: ISSN 2475-9953; PRMHAR
Grant/Contract Number:  
AC36-08GO28308; NSF-DMR-1157490; AC52-06NA25396
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Physical Review Materials
Additional Journal Information:
Journal Volume: 1; Journal Issue: 2; Journal ID: ISSN 2475-9953
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; isoelectronic impurity; localization; High Magnetic Field Science

Citation Formats

Alberi, K., Christian, T. M., Fluegel, B., Crooker, S. A., Beaton, D. A., and Mascarenhas, A.. Localization behavior at bound Bi complex states in GaAs1-xBix. United States: N. p., 2017. Web. doi:10.1103/PhysRevMaterials.1.024605.
Alberi, K., Christian, T. M., Fluegel, B., Crooker, S. A., Beaton, D. A., & Mascarenhas, A.. Localization behavior at bound Bi complex states in GaAs1-xBix. United States. doi:10.1103/PhysRevMaterials.1.024605.
Alberi, K., Christian, T. M., Fluegel, B., Crooker, S. A., Beaton, D. A., and Mascarenhas, A.. Sat . "Localization behavior at bound Bi complex states in GaAs1-xBix". United States. doi:10.1103/PhysRevMaterials.1.024605. https://www.osti.gov/servlets/purl/1415386.
@article{osti_1415386,
title = {Localization behavior at bound Bi complex states in GaAs1-xBix},
author = {Alberi, K. and Christian, T. M. and Fluegel, B. and Crooker, S. A. and Beaton, D. A. and Mascarenhas, A.},
abstractNote = {While bismuth-related states are known to localize carriers in GaAs1-xBix alloys, the localization behavior of distinct Bi pair, triplet and cluster states bound above the valence band is less well understood. We probe localization at three different Bi complex states in dilute GaAs1-xBix alloys using magneto-photoluminescence and time-resolved photoluminescence spectroscopy. The mass of electrons Coulomb-bound to holes trapped at Bi pair states is found to increase relative to the average electron mass in the alloy. This increase is attributed to enhanced local compressive strain in the immediate vicinity of the pairs. The dependence of energy transfer between these states on composition is also explored.},
doi = {10.1103/PhysRevMaterials.1.024605},
journal = {Physical Review Materials},
number = 2,
volume = 1,
place = {United States},
year = {Sat Jul 01 00:00:00 EDT 2017},
month = {Sat Jul 01 00:00:00 EDT 2017}
}

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