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Title: Topological Phase Transitions in the Photonic Spin Hall Effect

Abstract

The recent synthesis of two-dimensional staggered materials opens up burgeoning opportunities to study optical spin-orbit interactions in semiconducting Dirac-like systems. In this work, we unveil topological phase transitions in the photonic spin Hall effect in the graphene family materials. It is shown that an external static electric field and a high frequency circularly polarized laser allow for active on-demand manipulation of electromagnetic beam shifts. The spin Hall effect of light presents a rich dependence with radiation degrees of freedom, and material properties, and features nontrivial topological properties. Finally, we discover that photonic Hall shifts are sensitive to spin and valley properties of the charge carriers, providing an unprecedented pathway to investigate spintronics and valleytronics in staggered 2D semiconductors.

Authors:
ORCiD logo [1]
  1. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Publication Date:
Research Org.:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
USDOE Laboratory Directed Research and Development (LDRD) Program
OSTI Identifier:
1415381
Alternate Identifier(s):
OSTI ID: 1398150
Report Number(s):
LA-UR-17-23910
Journal ID: ISSN 0031-9007; TRN: US1800783
Grant/Contract Number:  
AC52-06NA25396
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 119; Journal Issue: 14; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Kort-Kamp, Wilton Junior de Melo. Topological Phase Transitions in the Photonic Spin Hall Effect. United States: N. p., 2017. Web. doi:10.1103/PhysRevLett.119.147401.
Kort-Kamp, Wilton Junior de Melo. Topological Phase Transitions in the Photonic Spin Hall Effect. United States. doi:10.1103/PhysRevLett.119.147401.
Kort-Kamp, Wilton Junior de Melo. Wed . "Topological Phase Transitions in the Photonic Spin Hall Effect". United States. doi:10.1103/PhysRevLett.119.147401. https://www.osti.gov/servlets/purl/1415381.
@article{osti_1415381,
title = {Topological Phase Transitions in the Photonic Spin Hall Effect},
author = {Kort-Kamp, Wilton Junior de Melo},
abstractNote = {The recent synthesis of two-dimensional staggered materials opens up burgeoning opportunities to study optical spin-orbit interactions in semiconducting Dirac-like systems. In this work, we unveil topological phase transitions in the photonic spin Hall effect in the graphene family materials. It is shown that an external static electric field and a high frequency circularly polarized laser allow for active on-demand manipulation of electromagnetic beam shifts. The spin Hall effect of light presents a rich dependence with radiation degrees of freedom, and material properties, and features nontrivial topological properties. Finally, we discover that photonic Hall shifts are sensitive to spin and valley properties of the charge carriers, providing an unprecedented pathway to investigate spintronics and valleytronics in staggered 2D semiconductors.},
doi = {10.1103/PhysRevLett.119.147401},
journal = {Physical Review Letters},
number = 14,
volume = 119,
place = {United States},
year = {Wed Oct 04 00:00:00 EDT 2017},
month = {Wed Oct 04 00:00:00 EDT 2017}
}

Journal Article:
Free Publicly Available Full Text
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Cited by: 6 works
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Works referenced in this record:

The electronic properties of graphene
journal, January 2009

  • Castro Neto, A. H.; Guinea, F.; Peres, N. M. R.
  • Reviews of Modern Physics, Vol. 81, Issue 1, p. 109-162
  • DOI: 10.1103/RevModPhys.81.109