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Title: Radio frequency plasma method for uniform surface processing of RF cavities and other three-dimensional structures

Abstract

A method for efficient plasma etching of surfaces inside three-dimensional structures can include positioning an inner electrode within the chamber cavity; evacuating the chamber cavity; adding a first inert gas to the chamber cavity; regulating the pressure in the chamber; generating a plasma sheath along the inner wall of the chamber cavity; adjusting a positive D.C. bias on the inner electrode to establish an effective plasma sheath voltage; adding a first electronegative gas to the chamber cavity; optionally readjusting the positive D.C. bias on the inner electrode reestablish the effective plasma sheath voltage at the chamber cavity; etching the inner wall of the chamber cavity; and polishing the inner wall to a desired surface roughness.

Inventors:
; ; ; ;
Publication Date:
Research Org.:
Old Dominion University Research Foundation, Norfolk, VA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1414940
Patent Number(s):
9,852,891
Application Number:
14/688,363
Assignee:
Old Dominion University Research Foundation (Norfolk, VA) OSTI
Resource Type:
Patent
Resource Relation:
Patent File Date: 2015 Apr 16
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING

Citation Formats

Popovic, Svetozar, Upadhyay, Janardan, Vuskovic, Leposava, Phillips, H. Lawrence, and Valente-Feliciano, Anne-Marie. Radio frequency plasma method for uniform surface processing of RF cavities and other three-dimensional structures. United States: N. p., 2017. Web.
Popovic, Svetozar, Upadhyay, Janardan, Vuskovic, Leposava, Phillips, H. Lawrence, & Valente-Feliciano, Anne-Marie. Radio frequency plasma method for uniform surface processing of RF cavities and other three-dimensional structures. United States.
Popovic, Svetozar, Upadhyay, Janardan, Vuskovic, Leposava, Phillips, H. Lawrence, and Valente-Feliciano, Anne-Marie. Tue . "Radio frequency plasma method for uniform surface processing of RF cavities and other three-dimensional structures". United States. doi:. https://www.osti.gov/servlets/purl/1414940.
@article{osti_1414940,
title = {Radio frequency plasma method for uniform surface processing of RF cavities and other three-dimensional structures},
author = {Popovic, Svetozar and Upadhyay, Janardan and Vuskovic, Leposava and Phillips, H. Lawrence and Valente-Feliciano, Anne-Marie},
abstractNote = {A method for efficient plasma etching of surfaces inside three-dimensional structures can include positioning an inner electrode within the chamber cavity; evacuating the chamber cavity; adding a first inert gas to the chamber cavity; regulating the pressure in the chamber; generating a plasma sheath along the inner wall of the chamber cavity; adjusting a positive D.C. bias on the inner electrode to establish an effective plasma sheath voltage; adding a first electronegative gas to the chamber cavity; optionally readjusting the positive D.C. bias on the inner electrode reestablish the effective plasma sheath voltage at the chamber cavity; etching the inner wall of the chamber cavity; and polishing the inner wall to a desired surface roughness.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Dec 26 00:00:00 EST 2017},
month = {Tue Dec 26 00:00:00 EST 2017}
}

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