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Title: Near-unity photoluminescence quantum yield in MoS.sub.2

Abstract

Two-dimensional (2D) transition-metal dichalcogenides have emerged as a promising material system for optoelectronic applications, but their primary figure-of-merit, the room-temperature photoluminescence quantum yield (QY) is extremely poor. The prototypical 2D material, MoS.sub.2 is reported to have a maximum QY of 0.6% which indicates a considerable defect density. We report on an air-stable solution-based chemical treatment by an organic superacid which uniformly enhances the photoluminescence and minority carrier lifetime of MoS.sub.2 monolayers by over two orders of magnitude. The treatment eliminates defect-mediated non-radiative recombination, thus resulting in a final QY of over 95% with a longest observed lifetime of 10.8.+-.0.6 nanoseconds. Obtaining perfect optoelectronic monolayers opens the door for highly efficient light emitting diodes, lasers, and solar cells based on 2D materials.

Inventors:
; ; ; ;
Publication Date:
Research Org.:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1414939
Patent Number(s):
9,852,927
Application Number:
15/294,707
Assignee:
The Regents of the University of California (Oakland, CA)
DOE Contract Number:  
AC02-05CH11231
Resource Type:
Patent
Resource Relation:
Patent File Date: 2016 Oct 15
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Amani, Matin, Lien, Der-Hsien, Kiriya, Daisuke, Bullock, James, and Javey, Ali. Near-unity photoluminescence quantum yield in MoS.sub.2. United States: N. p., 2017. Web.
Amani, Matin, Lien, Der-Hsien, Kiriya, Daisuke, Bullock, James, & Javey, Ali. Near-unity photoluminescence quantum yield in MoS.sub.2. United States.
Amani, Matin, Lien, Der-Hsien, Kiriya, Daisuke, Bullock, James, and Javey, Ali. 2017. "Near-unity photoluminescence quantum yield in MoS.sub.2". United States. https://www.osti.gov/servlets/purl/1414939.
@article{osti_1414939,
title = {Near-unity photoluminescence quantum yield in MoS.sub.2},
author = {Amani, Matin and Lien, Der-Hsien and Kiriya, Daisuke and Bullock, James and Javey, Ali},
abstractNote = {Two-dimensional (2D) transition-metal dichalcogenides have emerged as a promising material system for optoelectronic applications, but their primary figure-of-merit, the room-temperature photoluminescence quantum yield (QY) is extremely poor. The prototypical 2D material, MoS.sub.2 is reported to have a maximum QY of 0.6% which indicates a considerable defect density. We report on an air-stable solution-based chemical treatment by an organic superacid which uniformly enhances the photoluminescence and minority carrier lifetime of MoS.sub.2 monolayers by over two orders of magnitude. The treatment eliminates defect-mediated non-radiative recombination, thus resulting in a final QY of over 95% with a longest observed lifetime of 10.8.+-.0.6 nanoseconds. Obtaining perfect optoelectronic monolayers opens the door for highly efficient light emitting diodes, lasers, and solar cells based on 2D materials.},
doi = {},
url = {https://www.osti.gov/biblio/1414939}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Dec 26 00:00:00 EST 2017},
month = {Tue Dec 26 00:00:00 EST 2017}
}

Works referenced in this record:

Exfoliation of Thermoelectric Materials and Transition Metal Dichalcogenides Using Ionic Liquids
patent-application, January 2015