skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Si Doped Hafnium Oxide-A “Fragile” Ferroelectric System

Abstract

Here, silicon doped hafnium oxide was the material used in the original report of ferroelectricity in hafnia in 2011. Since then, it has been subject of many further publications including the demonstration of the world's first ferroelectric field-effect transistor in the state-of-the-art 28 nm technology. Though many studies are conducted with a strong focus on application in memory devices, a comprehensive study on structural stability in these films remains to be seen. In this work, a film thickness of about 36 nm, instead of the 10 nm used in most previous studies, is utilized to carefully probe how the concentration range impacts the evolution of phases, the dopant distribution, the field cycling effects, and their interplay in the macroscopic ferroelectric response of the films. Si:HfO2 appears to be a rather fragile system: different phases seem close in energy and the system is thus rich in competing phenomena. Nonetheless, it offers ferroelectricity or field-induced ferroelectricity for elevated annealing conditions up to 1000 °C. Similar to the measures taken for conventional ferroelectrics such as lead zirconate titanate, engineering efforts to guarantee stable interfaces and stoichiometry are mandatory to achieve stable performance in applications such as ferroelectric memories, supercapacitors, or energy harvesting devices.

Authors:
 [1]; ORCiD logo [1]; ORCiD logo [1];  [1];  [2];  [3];  [3]; ORCiD logo [3];  [3]; ORCiD logo [4]; ORCiD logo [1]
  1. NaMLab gGmbH, Dresden (Germany)
  2. Department of Materials Science and Engineering, North Carolina State University, Raleigh NC 27695-7907 USA
  3. North Carolina State Univ., Raleigh, NC (United States)
  4. NaMLab gGmbH, Dresden (Germany); TU Dresden, Dresden (Germany)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1414715
DOE Contract Number:  
AC05-00OR22725
Resource Type:
Journal Article
Journal Name:
Advanced Electronic Materials
Additional Journal Information:
Journal Volume: 3; Journal Issue: 10; Journal ID: ISSN 2199-160X
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ferroelectrics; hafnium oxide; Landau theory; Rietveld analysis

Citation Formats

Richter, Claudia, Schenk, Tony, Park, Min Hyuk, Tscharntke, Franziska A., Grimley, Everett D., LeBeau, James M., Zhou, Chuanzhen, Fancher, Christopher M., Jones, Jacob L., Mikolajick, Thomas, and Schroeder, Uwe. Si Doped Hafnium Oxide-A “Fragile” Ferroelectric System. United States: N. p., 2017. Web. doi:10.1002/aelm.201700131.
Richter, Claudia, Schenk, Tony, Park, Min Hyuk, Tscharntke, Franziska A., Grimley, Everett D., LeBeau, James M., Zhou, Chuanzhen, Fancher, Christopher M., Jones, Jacob L., Mikolajick, Thomas, & Schroeder, Uwe. Si Doped Hafnium Oxide-A “Fragile” Ferroelectric System. United States. doi:10.1002/aelm.201700131.
Richter, Claudia, Schenk, Tony, Park, Min Hyuk, Tscharntke, Franziska A., Grimley, Everett D., LeBeau, James M., Zhou, Chuanzhen, Fancher, Christopher M., Jones, Jacob L., Mikolajick, Thomas, and Schroeder, Uwe. Tue . "Si Doped Hafnium Oxide-A “Fragile” Ferroelectric System". United States. doi:10.1002/aelm.201700131.
@article{osti_1414715,
title = {Si Doped Hafnium Oxide-A “Fragile” Ferroelectric System},
author = {Richter, Claudia and Schenk, Tony and Park, Min Hyuk and Tscharntke, Franziska A. and Grimley, Everett D. and LeBeau, James M. and Zhou, Chuanzhen and Fancher, Christopher M. and Jones, Jacob L. and Mikolajick, Thomas and Schroeder, Uwe},
abstractNote = {Here, silicon doped hafnium oxide was the material used in the original report of ferroelectricity in hafnia in 2011. Since then, it has been subject of many further publications including the demonstration of the world's first ferroelectric field-effect transistor in the state-of-the-art 28 nm technology. Though many studies are conducted with a strong focus on application in memory devices, a comprehensive study on structural stability in these films remains to be seen. In this work, a film thickness of about 36 nm, instead of the 10 nm used in most previous studies, is utilized to carefully probe how the concentration range impacts the evolution of phases, the dopant distribution, the field cycling effects, and their interplay in the macroscopic ferroelectric response of the films. Si:HfO2 appears to be a rather fragile system: different phases seem close in energy and the system is thus rich in competing phenomena. Nonetheless, it offers ferroelectricity or field-induced ferroelectricity for elevated annealing conditions up to 1000 °C. Similar to the measures taken for conventional ferroelectrics such as lead zirconate titanate, engineering efforts to guarantee stable interfaces and stoichiometry are mandatory to achieve stable performance in applications such as ferroelectric memories, supercapacitors, or energy harvesting devices.},
doi = {10.1002/aelm.201700131},
journal = {Advanced Electronic Materials},
issn = {2199-160X},
number = 10,
volume = 3,
place = {United States},
year = {2017},
month = {8}
}