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Title: An Ultrathin Single Crystalline Relaxor Ferroelectric Integrated on a High Mobility Semiconductor

Abstract

The epitaxial growth of multifunctional oxides on semiconductors has opened a pathway to introduce new functionalities to semiconductor device technologies. In particular, ferroelectric materials integrated on semiconductors could lead to low-power field-effect devices that can be used for logic or memory. Essential to realizing such field-effect devices is the development of ferroelectric metal-oxide-semiconductor (MOS) capacitors, in which the polarization of a ferroelectric gate is coupled to the surface potential of a semiconducting channel. Here we demonstrate that ferroelectric MOS capacitors can be realized using single crystalline SrZrxTi1-xO3 (x= 0.7) that has been epitaxially grown on Ge. We find that the ferroelectric properties of SrZrxTi1-xO3 are exceptionally robust, as gate layers as thin as 5 nm give rise to hysteretic capacitance-voltage characteristics that are 2 V in width. The development of ferroelectric MOS capacitors with gate thicknesses that are technologically relevant opens a pathway to realize scalable ferroelectric field-effect devices.

Authors:
 [1]; ORCiD logo [2];  [1];  [3];  [4]; ORCiD logo [5];  [5];  [3];  [2];  [5]; ORCiD logo [1]
  1. Department of Physics, University of Texas−Arlington, Arlington, Texas 76019, United States
  2. Department of Physics and Astronomy, University of Nebraska—Lincoln, Lincoln, Nebraska 68588, United States
  3. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695, United States
  4. Environmental Molecular Sciences Laboratory, Earth &, Biological Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352, United States
  5. Physical Sciences Division, Physical &, Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352, United States
Publication Date:
Research Org.:
Pacific Northwest National Laboratory (PNNL), Richland, WA (US), Environmental Molecular Sciences Laboratory (EMSL)
Sponsoring Org.:
USDOE
OSTI Identifier:
1414532
Report Number(s):
PNNL-SA-123226
Journal ID: ISSN 1530-6984; 49306; KC0203020
DOE Contract Number:
AC05-76RL01830
Resource Type:
Journal Article
Resource Relation:
Journal Name: Nano Letters; Journal Volume: 17; Journal Issue: 10
Country of Publication:
United States
Language:
English
Subject:
Environmental Molecular Sciences Laboratory

Citation Formats

Moghadam, Reza M., Xiao, Zhiyong, Ahmadi-Majlan, Kamyar, Grimley, Everett D., Bowden, Mark, Ong, Phuong-Vu, Chambers, Scott A., Lebeau, James M., Hong, Xia, Sushko, Peter V., and Ngai, Joseph H.. An Ultrathin Single Crystalline Relaxor Ferroelectric Integrated on a High Mobility Semiconductor. United States: N. p., 2017. Web. doi:10.1021/acs.nanolett.7b02947.
Moghadam, Reza M., Xiao, Zhiyong, Ahmadi-Majlan, Kamyar, Grimley, Everett D., Bowden, Mark, Ong, Phuong-Vu, Chambers, Scott A., Lebeau, James M., Hong, Xia, Sushko, Peter V., & Ngai, Joseph H.. An Ultrathin Single Crystalline Relaxor Ferroelectric Integrated on a High Mobility Semiconductor. United States. doi:10.1021/acs.nanolett.7b02947.
Moghadam, Reza M., Xiao, Zhiyong, Ahmadi-Majlan, Kamyar, Grimley, Everett D., Bowden, Mark, Ong, Phuong-Vu, Chambers, Scott A., Lebeau, James M., Hong, Xia, Sushko, Peter V., and Ngai, Joseph H.. Wed . "An Ultrathin Single Crystalline Relaxor Ferroelectric Integrated on a High Mobility Semiconductor". United States. doi:10.1021/acs.nanolett.7b02947.
@article{osti_1414532,
title = {An Ultrathin Single Crystalline Relaxor Ferroelectric Integrated on a High Mobility Semiconductor},
author = {Moghadam, Reza M. and Xiao, Zhiyong and Ahmadi-Majlan, Kamyar and Grimley, Everett D. and Bowden, Mark and Ong, Phuong-Vu and Chambers, Scott A. and Lebeau, James M. and Hong, Xia and Sushko, Peter V. and Ngai, Joseph H.},
abstractNote = {The epitaxial growth of multifunctional oxides on semiconductors has opened a pathway to introduce new functionalities to semiconductor device technologies. In particular, ferroelectric materials integrated on semiconductors could lead to low-power field-effect devices that can be used for logic or memory. Essential to realizing such field-effect devices is the development of ferroelectric metal-oxide-semiconductor (MOS) capacitors, in which the polarization of a ferroelectric gate is coupled to the surface potential of a semiconducting channel. Here we demonstrate that ferroelectric MOS capacitors can be realized using single crystalline SrZrxTi1-xO3 (x= 0.7) that has been epitaxially grown on Ge. We find that the ferroelectric properties of SrZrxTi1-xO3 are exceptionally robust, as gate layers as thin as 5 nm give rise to hysteretic capacitance-voltage characteristics that are 2 V in width. The development of ferroelectric MOS capacitors with gate thicknesses that are technologically relevant opens a pathway to realize scalable ferroelectric field-effect devices.},
doi = {10.1021/acs.nanolett.7b02947},
journal = {Nano Letters},
number = 10,
volume = 17,
place = {United States},
year = {Wed Sep 13 00:00:00 EDT 2017},
month = {Wed Sep 13 00:00:00 EDT 2017}
}