An Ultrathin Single Crystalline Relaxor Ferroelectric Integrated on a High Mobility Semiconductor
[2];
[5];
[1]
- Department of Physics, University of Texas−Arlington, Arlington, Texas 76019, United States
- Department of Physics and Astronomy, University of Nebraska—Lincoln, Lincoln, Nebraska 68588, United States
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695, United States
- Environmental Molecular Sciences Laboratory, Earth &, Biological Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352, United States
- Physical Sciences Division, Physical &, Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352, United States
The epitaxial growth of multifunctional oxides on semiconductors has opened a pathway to introduce new functionalities to semiconductor device technologies. In particular, ferroelectric materials integrated on semiconductors could lead to low-power field-effect devices that can be used for logic or memory. Essential to realizing such field-effect devices is the development of ferroelectric metal-oxide-semiconductor (MOS) capacitors, in which the polarization of a ferroelectric gate is coupled to the surface potential of a semiconducting channel. Here we demonstrate that ferroelectric MOS capacitors can be realized using single crystalline SrZrxTi1-xO3 (x= 0.7) that has been epitaxially grown on Ge. We find that the ferroelectric properties of SrZrxTi1-xO3 are exceptionally robust, as gate layers as thin as 5 nm give rise to hysteretic capacitance-voltage characteristics that are 2 V in width. The development of ferroelectric MOS capacitors with gate thicknesses that are technologically relevant opens a pathway to realize scalable ferroelectric field-effect devices.
- Research Organization:
- Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Environmental Molecular Sciences Lab. (EMSL)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC05-76RL01830
- OSTI ID:
- 1414532
- Report Number(s):
- PNNL-SA-123226; 49306; KC0203020
- Journal Information:
- Nano Letters, Vol. 17, Issue 10; ISSN 1530-6984
- Publisher:
- American Chemical Society
- Country of Publication:
- United States
- Language:
- English
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