Al0.85Ga0.15N/Al0.70Ga0.30N High Electron Mobility Transistors with Schottky Gates and Large On/Off Current Ratio over Temperature
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
AlGaN-channel high electron mobility transistors (HEMTs) are among a class of ultra wide-bandgap transistors that are promising candidates for RF and power applications. Long-channel AlxGa1-xN HEMTs with x = 0.7 in the channel have been built and evaluated across the -50°C to +200°C temperature range. These devices achieved room temperature drain current as high as 46 mA/mm and were absent of gate leakage until the gate diode forward bias turn-on at ~2.8 V, with a modest -2.2 V threshold voltage. A very large Ion/Ioff current ratio, of 8 × 109 was demonstrated. A near ideal subthreshold slope that is just 35% higher than the theoretical limit across the temperature range was characterized. The ohmic contact characteristics were rectifying from -50°C to +50°C and became nearly linear at temperatures above 100°C. An activation energy of 0.55 eV dictates the temperature dependence of off-state leakage.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- Grant/Contract Number:
- AC04-94AL85000; NA0003525
- OSTI ID:
- 1414439
- Report Number(s):
- SAND-2017-13486J; 659496
- Journal Information:
- ECS Journal of Solid State Science and Technology, Vol. 6, Issue 12; ISSN 2162-8769
- Publisher:
- Electrochemical SocietyCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
AlGaN polarization-doped field effect transistor with compositionally graded channel from Al 0.6 Ga 0.4 N to AlN
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journal | February 2019 |
Enhancement-mode Al 0.85 Ga 0.15 N/Al 0.7 Ga 0.3 N high electron mobility transistor with fluorine treatment
|
journal | March 2019 |
Visible- and solar-blind photodetectors using AlGaN high electron mobility transistors with a nanodot-based floating gate
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journal | January 2019 |
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